Abstract:The growth of $\alpha$-Ga$_2$O$_3$ and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $\alpha$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $\alpha$-Ga$_2$O$_3$(10$\bar{1}$0) and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The presence of In on the $\alpha$-Ga$_2$O$_3$ growth surface remarkably expands its growth window far into the metal-rich flux regime and to higher growth temperatures. With increasing O-to-Ga flux ratio ($R_{\text{O}}$), In incorporates into $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ up to $x \leq 0.08$. Upon a critical thickness, $\beta$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ nucleates and subsequently heteroepitaxially grows on top of $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ facets. Metal-rich MOCATAXY growth conditions, where $\alpha$-Ga$_2$O$_3$ would not conventionally stabilize, lead to single-crystalline $\alpha$-Ga$_2$O$_3$ with negligible In incorporation and improved surface morphology. Higher $T_{\text{G}}$ further results in single-crystalline $\alpha$-Ga$_2$O$_3$ with well-defined terraces and step edges at their surfaces. For $R_{\text{O}} \leq 0.53$, In acts as a surfactant on the $\alpha$-Ga$_2$O$_3$ growth surface by favoring step edges, while for $R_{\text{O}} \geq 0.8$, In incorporates and leads to a-plane $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ faceting and the subsequent ($\bar{2}$01) $\beta$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ growth on top. Thin film analysis by STEM reveals highly crystalline $\alpha$-Ga$_2$O$_3$ layers and interfaces. We provide a phase diagram to guide the MBE and MOCATAXY growth of single-crystalline $\alpha$-Ga$_2$O$_3$ on $\alpha$-Al$_2$O$_3$(10$\bar{1}$0).

Floating zone growth of α-Na$_{0.90}$MnO$_2$ single crystals

Optical floating zone growth of high-quality Cu2MnAl single crystals

Single crystal growth of the hexagonal manganites $R$MnO$_3$ ($R$ = rare earth) by the optical floating-zone method

GROWTH, STRUCTURE AND PROPERTIES OF NaxCoO2 CRYSTALS

Single crystal growth of Mn4Nb2O9 and its structure-magnetic coupling

Growth, characterization, and magnetic properties of a Li(Mn,Ni)PO4 single crystal

Hydrothermal Synthesis and Properties of NaxMnO2 Crystals

Floating Zone Growth of Large Single Crystals of SrFeO_3-x

Single Crystal Growth of the Hexagonal Manganites R Mno3 (R = Rare Earth) by the Optical Floating-Zone Method

Crystal Growth, Preparation, Structure and Electrochemical Properties of Alluaudite-type NaMnV2(PO4)(3)

Growth of $α-Ga_2O_3$ on $Al_2O_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Growth and Optical Properties of the Whole System of Li(Mn1-x,Nix)PO4 (0 ≤ x ≤ 0.5) Single Crystals

Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy

Growth of Gan Single Crystals by Li3n Flux with Mn As Addition

Growth of Single Crystals at Ambient Pressure and Their Transport Properties

Growth and properties of MnO doped near stoichiometric LiNbO3 crystals

Single Crystal Growth of CuFe1−Ga O2 by the Optical Floating-Zone Method

Growth and characterization of MnO doped near stoichiometric LiNbO 3 crystals

Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation

Growth of atomically smooth thin films of the electronically phase separated manganite (La$_{0.5}$Pr$_{0.5}$)$_{0.67}$Ca$_{0.33}$MnO$_{3}$

Epitaxial Growth of Metastable La0.67Sr0.33MnO3−δ Films by Using Sr3Al2O6 As Multifunctional Buffer Layers