Micro-engineered CH$_3$NH$_3$PbI$_3$ nanowire/graphene phototransistor for low intensity light detection at room temperature

M. Spina,M. Lehmann,B. Náfrádi,L. Bernard,E. Bonvin,R. Gaál,A. Magrez,L. Forró,E. Horváth

DOI: https://doi.org/10.1002/smll.201501257

2016-12-03

Abstract:Methylammonium lead iodide perovskite has revolutionized the field of third generation solid-state solar cells leading to simple solar cell structures1 and certified efficiencies up to 20.1%. Recently the peculiar light harvesting properties of organometal halide perovskites have been exploited in photodetectors where responsivities of ~3.5 A/W and 180 A/W have been respectively achieved for pure perovskite-based devices and hybrid nanostructures. Here, we report on the first hybrid phototransistors where the performance of a network of photoactive Methylammonium Lead Iodide nanowires (hereafter MAPbI$_3$NW) are enhanced by CVD-grown monolayer graphene. These devices show responsivities as high as ~2.6x10$^6$ A/W in the visible range showing potential as room-temperature single-electron detector.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

This paper aims to solve the problem of low - intensity light detection, especially to achieve efficient single - photon detection at room temperature. The research team micro - engineered a phototransistor based on the combination of methylammonium lead iodide (CH₃NH₃PbI₃) nanowires and graphene to improve the responsivity in the visible light range. This new device shows a responsivity as high as approximately \(2.6\times 10^6\) A/W, which is several orders of magnitude higher than similar devices previously reported, demonstrating its potential as a single - electron detector at room temperature.

Specifically, the paper addresses the following key issues:
1. **Improving Responsivity**: By optimizing the contact interface between methylammonium lead iodide nanowires and graphene, the responsivity of the device is significantly improved.
2. **Low - Intensity Light Detection**: At extremely low light intensities (such as at the pW level), this device can still maintain high responsivity and is suitable for detection in low - light - intensity environments.
3. **Room - Temperature Operation**: This device can work at room temperature without a complex cooling system, which has the advantage of practical application.

These improvements not only enhance the performance of the device but also provide new possibilities for its applications in single - photon detection, low - light - intensity imaging and other fields.