Abstract:We systematically examine the topological, valleytronic, and optical properties of experimentally accessible PbS (001) few-layers, with a focus on the monolayer. With even-odd layer-dependent oscillations and without band inversions, the band gaps cover a wide spectrum from infrared to visible, making the few-layers promising for optoelectronics. Intriguingly, the uniaxial (biaxial) compressive strain can tune the trivial monolayer into a $\mathcal{Z}_2$-topological (topological crystalline) insulator, which may be utilized for controllable low-power electronic devices. Although elliptical dichroism vanishes in the monolayer due to inversion symmetry, optical pumping provides an efficient tool to characterize the three phases and to realize charge, spin, and valley Hall effects in optoelectronic transport that are tunable by external strain and light ellipticity.

What problem does this paper attempt to address?

This paper aims to explore the topological, valleytronics and optical properties of single - layer PbS(001), especially its characteristics at different layer numbers. Specifically, the research attempts to solve the following key issues: 1. **Band - gap characteristics**: - Through first - principles calculations, it is revealed that the band - gap of few - layer PbS(001) materials exhibits an odd - even layer - number - dependent oscillation phenomenon without band inversion. - The band - gap ranges from infrared to visible light, covering a wide spectral region, which makes these few - layer materials potentially useful in optoelectronic devices. 2. **Strain regulation**: - Research shows that uniaxial or biaxial compressive strain can tune the ordinary single - layer PbS into a two - dimensional topological insulator (TI) or a topological crystalline insulator (TCI). This finding means that controllable operation of low - power - consumption electronic devices can be achieved through external strain. - Specifically, when the applied biaxial strain exceeds - 2.2%, the single - layer PbS will transform into a TCI; while when the uniaxial strain exceeds - 2.7% but is less than - 10.0%, the single - layer PbS will transform into a Z2 - TI. 3. **Optical pumping effect**: - Although due to inversion symmetry, elliptical dichroism disappears in the single - layer, optical pumping provides an effective tool to characterize three different topological phases and realize charge, spin and valley Hall effects regulated by external strain and light ellipticity. - Optical pumping can be used not only to distinguish normal insulators (NI), topological insulators (TI) and topological crystalline insulators (TCI), but also to control these effects by selecting different polarized lights. 4. **Theoretical model construction**: - An effective k·p Hamiltonian model is constructed to describe the electronic structure of the PbS(001) single - layer. This model can explain the band - inversion phenomenon and predict topological phase transitions under different strain conditions. In summary, this paper solves the problem of how to realize and control topological phase transitions and their related charge, spin and valley Hall effects in single - layer PbS(001) materials through strain regulation and optical pumping techniques. These research results provide theoretical basis and technical support for the development of new low - power - consumption electronic devices.

Topological, Valleytronic, and Optical Properties of Monolayer PbS

Pressure Induced Topological Phase Transition in Layered Bi2S3.

Single Layer Lead Iodide: Computational Exploration of Structural, Electronic and Optical Properties, Strain Induced Band Modulation and the Role of Spin-Orbital-Coupling

Large-scale 2D PbI 2 monolayers: experimental realization and their indirect band-gap related properties

Two-dimensional Polar Metal of a PbTe Monolayer by Electrostatic Doping.

Tunable topological electronic structures in Sb(111) bilayers: A first-principles study

Van der Waals heterostructure Pt 2 HgSe 3 / CrI 3 for topological valleytronics

Van Der Waals Heterostructure Pt$_{2}$HgSe$_{3}$/CrI$_3$ for Topological Valleytronics

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

Polaritonic Chern insulators in monolayer semiconductors

Highly Tunable Berry Phase and Ambipolar Field Effect in Topological Crystalline Insulator Pb1(-X)Sn(X)Se

Observation of Topological Crystalline Insulator phase in the lead tin chalcogenide Pb1-xSnxTe material class

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Spin-Orbit Coupling Electronic Structures of Organic-Group Functionalized Sb and Bi Topological Monolayers

Large Gap Two-Dimensional Topological Insulators with the Significant Rashba Effect in Ethynyl and Methyl Functionalized PbSn Monolayers

Crystal Field Effect Induced Topological Crystalline Insulators In Monolayer IV-VI Semiconductors

Optical-pump terahertz-probe spectroscopy of the topological crystalline insulator Pb1-xSnxSe through the topological phase transition

Exploring the Valleytronic, Optical, and Piezoelectric Properties of Janus MoBXY2 (X = N, P; Y = S, Se, Te) Monolayers for Multifunctional Applications

Topological Crystalline Insulator Pbxsn1-Xte Thin Films on Srtio3 (001) with Tunable Fermi Levels

Built-in electric field and strain tunable valley-related multiple topological phase transitions in monolayers

Few-Layer PbI2 Nanoparticle: A 2D Semiconductor with Lateral Quantum Confinement.