Robust spin transfer torque in antiferromagnetic tunnel junctions

H. Saidaoui,A. Manchon,X. Waintal

DOI: https://doi.org/10.1103/PhysRevB.95.134424

2016-07-08

Abstract:We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling the electrical manipulation of the Néel antiferromagnetic order parameter is out of plane $\sim {\bf n}\times{\bf p}$, while the torque competing with the antiferromagnetic exchange is in-plane $\sim {\bf n}\times({\bf p}\times{\bf n})$. Here, ${\bf { p}}$ and ${\bf { n}}$ are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows similar behavior as in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than in antiferromagnetic metallic spin-valves due to the tunneling nature of spin transport.

Mesoscale and Nanoscale Physics