Robust spin transfer torque in antiferromagnetic tunnel junctions

H. Saidaoui,A. Manchon,X. Waintal

DOI: https://doi.org/10.1103/PhysRevB.95.134424

2016-07-08

Abstract:We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling the electrical manipulation of the Néel antiferromagnetic order parameter is out of plane $\sim {\bf n}\times{\bf p}$, while the torque competing with the antiferromagnetic exchange is in-plane $\sim {\bf n}\times({\bf p}\times{\bf n})$. Here, ${\bf { p}}$ and ${\bf { n}}$ are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows similar behavior as in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than in antiferromagnetic metallic spin-valves due to the tunneling nature of spin transport.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

This paper aims to solve the robustness problem of spin - transfer torque in antiferromagnetic tunnel junctions (AF - MTJ). Specifically, the researchers attempt to understand the performance of current - induced spin torque in antiferromagnetic tunnel junctions in the presence of disorder and compare it with the traditional metallic spin - valve.

### Main problems:
1. **Characteristics of current - induced spin torque**: The researchers hope to understand how current affects the electrical manipulation of the Néel antiferromagnetic order parameter in antiferromagnetic tunnel junctions. They find that the torque for electrically manipulating the Néel order parameter is perpendicular to the plane, $\sim \mathbf{n} \times \mathbf{p}$, while the torque competing with antiferromagnetic exchange is parallel to the plane, $\sim \mathbf{n} \times (\mathbf{p} \times \mathbf{n})$. Here, $\mathbf{p}$ and $\mathbf{n}$ are the directions of the Néel order parameter of the reference layer and the free layer respectively.

2. **Bias - voltage dependence**: The researchers also explore the dependence of these torque components on the bias voltage. The results show that the in - plane torque mainly has a linear dependence on the bias voltage $V$, while the out - of - plane torque mainly has a quadratic dependence on the bias voltage $V$.

3. **Effect of disorder on torque**: A key issue is the effect of disorder on spin - transfer torque. Research shows that in antiferromagnetic tunnel junctions, spin - transfer torque has higher robustness to disorder, which is in sharp contrast to antiferromagnetic metallic spin - valves. Due to the nature of tunneling transmission, spin - transfer in antiferromagnetic tunnel junctions can better resist the influence of disorder.

### Research methods:
- **Model system**: The researchers consider a system consisting of two semi - infinite antiferromagnetic electrodes and a tunneling barrier.
- **Calculation method**: Use the non - equilibrium Green's function formalism and the tight - binding code KWANT to calculate the transport properties of the system.

### Main conclusions:
- In antiferromagnetic tunnel junctions, the robustness of spin - transfer torque to disorder is much higher than that of antiferromagnetic metallic spin - valves.
- The spin - transfer torque in antiferromagnetic tunnel junctions is mainly manifested as an out - of - plane torque and has a quadratic dependence on the bias voltage.
- Since the up - and down - spins are degenerate in antiferromagnetic materials, disorder hotspots in the tunneling barrier will only enhance the tunneling current without changing the sub - lattice polarization, making the spin - torque efficiency more stable.

Through these studies, the authors demonstrate the advantages of antiferromagnetic tunnel junctions as potential candidates for realizing spin - transfer torque in antiferromagnetic materials.