Simulation and modeling of a new CsSnI3 solar cell structure: A numerical study
Razika Adjouz,Zehor Allam,Lahcene Souli,Loumafak Hafaifa,Achouak Zebeir
DOI: https://doi.org/10.1088/1361-6641/ad8ae2
IF: 2.048
2024-10-25
Semiconductor Science and Technology
Abstract:Perovskite CsSnI3 is a highly promising material in optoelectronics, particularly for solar cells. This research focuses on enhancing the efficiency of CsSnI3-based solar cells by investigating the effects of key parameters such as absorber layer thickness, defect density, and parasitic resistances on their performance. Utilizing the SCAPS-1D software, a solar cell with a layered architecture consisting of SPIRO/CsSnI3/CH3NH3SnI3/PCBM/ITO was simulated, where SPIRO functions as the hole transport layer, CsSnI3 as the absorber layer, CH3NH3SnI3 as the intermediate layer, and PCBM as the electron transport layer. Simulation results identified an optimal CsSnI3 absorber thickness of 300 nm, yielding a maximum power conversion efficiency of 18.67%, with high values for open-circuit voltage (Voc = 0.85 V), short-circuit current density (Jsc = 31.092 mA/cm2), and fill factor (FF = 71.02%). However, the study also highlighted the adverse impact of parasitic resistances on cell efficiency, with the efficiency decreasing to 13.32% when realistic series resistance values were considered, underscoring the importance of minimizing these resistances to improve the stability of the device.Additionally, a notable efficiency of 19.47% was achieved when the shunt resistance was set at Rshunt = 108Ω⋅cm2.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter