Local motifs in GeS$_2$-Ga$_2$S$_3$ glasses

Ildikó Pethes,Virginie Nazabal,Radwan Chahal,Bruno Bureau,Ivan Kaban,Stéphanie Belin,Pál Jóvári
DOI: https://doi.org/10.1016/j.jallcom.2016.02.193
2016-04-01
Abstract:The structure of (GeS$_2$)$_{0.75}$(Ga$_2$S$_3$)$_{0.25}$ and (GeS$_2$)$_{0.83}$(Ga$_2$S$_3$)$_{0.17}$ glasses was investigated by Raman scattering, high energy X-ray diffraction and extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges. The reverse Monte Carlo simulation technique (RMC) was used to obtain structural models compatible with diffraction and EXAFS datasets. It was found that the coordination number of Ga is close to four. While Ge atoms have only S neighbors, Ga binds to S as well as to Ga atoms showing a violation of chemical ordering in GeS$_2$-Ga$_2$S$_3$ glasses. Analysis of the corner- and edge-sharing between [GeS$_{4/2}$] units revealed that about 30% of germanium atoms participate in the edge-shared tetrahedra.
Disordered Systems and Neural Networks,Materials Science
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