Inclusion of metal nanoparticles at the core-shell interface of GaAs 0.99 Bi 0.01 /ZnO/ITO core-shell nanowire solar cell for photovoltaic performance enhancement

Debamita Roy,Abhijit Biswas,Dip Prakash Samajdar
DOI: https://doi.org/10.1088/1402-4896/ad3fee
2024-04-19
Physica Scripta
Abstract:Optoelectronic performance analysis of perpendicularly aligned conformally coated GaAs0.99Bi0.01/ZnO/ITO core-shell nanowire solar cell having a core length of 1μm, core diameter of 160 nm, shell thickness of 10nm and period of 280nm, decorated with Au metal nanoparticles (MNPs) with variable diameters at the core shell interface is done employing FDTD method. Diameter optimization MNPs with four different diameters values around core GaAs0.99Bi0.01 nanowire is accomplished in terms of maximum short circuit current density (Jsc), which offered an optimized diameter combination of D1=D2=50nm and D3=34nm, D4=10nm, resulting in a maximum Jsc of 32.6 mA/cm2. A detailed analysis of the electric field profile including its top view and longitudinal view is presented to investigate the distribution of electric field upon optical illumination at different wavelength range. The overall photo generation rate profile is also presented to focus on the localized surface plasmon resonance effect caused by the metal nanoparticles (MNPs). In order to boost the electrical performance, a thin coating of electron selective ZnO shell is used around p type GaAs0.99Bi0.01 core, which aids in charge carrier separation, thereby improving open circuit voltage (Voc) and overall power conversion efficiency (PCE). The electrical characteristics of bare NW and MNP decorated GaAs0.99Bi0.01/ZnO core-shell nanowire solar cell for different MNP diameters have been compared. For the optimized diameter combination, as stated above, a Voc of 941 mV, Jsc of 28 mA/cm2, FF of 84.35% and PCE of 22.19% is obtained for SRV of 105cm/s at the interfaces and SRH recombination lifetime as less as 10 ns. For SRV of 105cm/s at the interfaces and SRH recombination lifetime of 1μs, this proposed structure can achieve a Voc of 1.06V, Jsc of 31.5 mA/cm2, PCE of 29.37% and FF of 87.88% for equal diameters of D1=D2= D3=D4=50nm.
physics, multidisciplinary
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