DEFECT INDUCED DIFFUSION MECHANISMS IN IONIMPLANTED QUANTUM WELL

M. Fatah,I. Karla,P. Harrison,T. Stirner,W. Hagston,C. J-H,HoggDepartment
Abstract:The present paper describes a method for utilizing X-ray diiraction measurements to determine the diiusion constant D associated with a speciic diffusion mechanism. In particular, for Cd 1?x Mn x Te quantum well structures a value of D 0:5 A 2 s ?1 was obtained for a vacancy controlled diiusion process.
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