Y. Zhang,H. W. Zhang,X. R. Wang
Abstract:Within the linear response of polycrystalline magnetic films to electric currents, a general analysis predicts three new galvanomagnetic effects originated from the two-dimensional nature of the films. These new galvanomagnetic effects, which differ from the conventional extraordinary Hall effect and anisotropic magnetoresistance, are follows. 1) The longitudinal resistivity depends linearly on the magnetization component perpendicular to a film. 2) A current parallel to the magnetization can generate an electric field in the vertical direction of a film. 3) A current perpendicular to a film can generate an electric field along the magnetization direction.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to predict and explain new magnetoelectric effects (galvanomagnetic effects) in polycrystalline magnetic thin films. Specifically, through theoretical analysis, the author discovered three previously unknown magnetoelectric effects, which originate from the two - dimensional characteristics of the thin films. The following are the specific descriptions of these three new effects:
1. **The longitudinal resistivity is linearly related to the magnetization component perpendicular to the thin film**:
\[
\rho_{xx}=\rho_{\perp}+\frac{\Delta\rho}{M^{2}}M_{z}^{2}-R_{4}M_{z}
\]
Here, \(\rho_{\perp}\) is the resistivity when the magnetization direction \(M\) is perpendicular to the current density \(J\), \(\Delta\rho = \rho_{\parallel}-\rho_{\perp}\) is the anisotropic magnetoresistance (AMR), and \(R_{4}\) is a newly introduced coefficient.
2. **The current along the magnetization direction can generate an electric field in the direction perpendicular to the thin film**:
\[
E_{z}=R_{3}(M\cdot J)
\]
When the current is parallel to the magnetization direction, an electric field will be generated in the direction perpendicular to the thin film.
3. **The current perpendicular to the thin film can generate an electric field in the magnetization direction**:
\[
E_{x}=R_{2}J_{z}M_{x}
\]
When the current is perpendicular to the thin film, an electric field will be generated in the magnetization direction.
### Research Background
Traditional magnetoelectric effects such as the extraordinary Hall effect (EHE) and anisotropic magnetoresistance (AMR) have been widely studied in experiments. However, most of these effects were discovered in bulk materials, and there were few previous studies on new effects in two - dimensional thin films. In this paper, all possible magnetoelectric effects in polycrystalline magnetic thin films are systematically explored through the tensor analysis method, and the above three new effects are predicted.
### Experimental Verification
To verify these new effects, the author proposes two experimental configurations (as shown in Figure 1):
- **Figure 1(a)**: The current flows in the plane of the thin film (for example, along the x - direction), and the magnetization direction is in the yz - plane. By measuring the voltage change under different magnetization directions, the existence of \(R_{4}\) can be verified.
- **Figure 1(b)**: The current is perpendicular to the thin film (along the z - direction), and the magnetization direction is in the xz - plane. By measuring the voltage change under different magnetization directions, the existence of \(R_{2}\) and \(R_{3}\) can be verified.
### Significance
These new effects not only enrich the understanding of magnetoelectric effects but also may have an important impact on the extraction of material parameters (such as the spin Hall angle), especially when using polycrystalline magnetic thin films for experiments. In addition, these effects may provide new ideas for the development of new magnetoelectronic devices.
In summary, through the linear response analysis of polycrystalline magnetic thin films, this paper predicts three new magnetoelectric effects and discusses their potential applications and experimental verification methods.