Nonequilibrium plasmon emission drives ultrafast carrier relaxation dynamics in photoexcited graphene

J. M. Hamm,A. F. Page,J. Bravo-Abad,F. J. Garcia-Vidal,O. Hess

DOI: https://doi.org/10.1103/PhysRevB.93.041408

2015-10-01

Abstract:The fast decay of carrier inversion in photoexcited graphene has been attributed to optical phonon emission and Auger recombination. Plasmon emission provides another pathway that, as we show here, drives the carrier relaxation dynamics on ultrafast timescales. In studying the nonequilibrium relaxation dynamics we find that plasmon emission effectively converts inversion into hot carriers, whose energy is then extracted by optical phonon emission. This mechanism not only explains the observed fs-lifetime of inversion but also offers the prospect for atomically thin ultrafast plasmon emitters.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: the ultrafast decay mechanism of carrier inversion in photo - excited graphene. Specifically, the paper explores whether nonequilibrium plasmon emission (NPE) can be the main pathway driving carrier relaxation dynamics and explains the observed inversion lifetime on the femtosecond time scale.

### Problem Background

1. **Known Phenomena**
- In photo - excited graphene, the rapid decay of carrier inversion is usually attributed to optical phonon emission and Auger recombination.
- Experimental observations show that carrier inversion decays rapidly within the femtosecond (fs) time scale, and this phenomenon has not been fully explained yet.

2. **Research Motivation**
- The traditional explanation attributes the rapid decay to Auger recombination, but this explanation is controversial because the dynamic screening effect may suppress the Auger process.
- Plasmon emission has been proposed as a new possible mechanism, but its specific impact on carrier relaxation dynamics is still unclear.

### Core Problems of the Paper

The paper aims to verify whether plasmon emission can drive carrier relaxation on an ultrafast time scale and explain the following specific problems:

- **Role of Plasmon Emission**: Can plasmon emission effectively convert inversion into hot carriers?
- **Relaxation Time Scale**: Can plasmon emission explain the 100 - fs time - scale inversion decay observed in experiments?
- **Interaction with Phonon Emission**: Is there a synergistic effect between plasmon emission and optical phonon emission, thereby accelerating carrier recombination and cooling?

### Main Conclusions

Through theoretical modeling and numerical simulation, the paper draws the following conclusions:

- **Plasmon Emission Drives Ultrafast Relaxation**: Plasmon emission can indeed drive carrier relaxation on the 100 - fs time scale, rapidly converting inversion into hot carriers.
- **Synergistic Effect between Plasmon and Phonon**: The synergistic effect between plasmon emission and optical phonon emission can effectively bypass the bottleneck in a single channel, accelerating carrier recombination and cooling.
- **Possibility of Experimental Verification**: Compared with the difficult - to - detect Auger process, plasmon emission can be directly observed, providing a new approach for experimental verification.

### Formula Summary

The key formulas involved in the paper include:

- **Time - Evolution Equations of Carrier Density and Energy Density**:
\[
\dot{N}_\alpha=\dot{N}_{\text{pump}}-\dot{N}_{\text{rel}}, \quad \dot{U}=\dot{U}_{\text{pump}}-\dot{U}_{\text{rel}}
\]
- **Net Boson Emission Rate**:
\[
r_{\nu,\lambda}(q)=\gamma^+_{\nu,\lambda}(q)[n_\nu(q) + 1]-\gamma^-_{\nu,\lambda}(q)n_\nu(q)
\]
- **Plasmon Frequency Dispersion Relation**:
\[
\varepsilon_{\text{RPA}}(q,\omega)=1 - V_q\Pi^{T_c}_{\mu_e,\mu_h}(q,\omega)=0
\]

These formulas are used to describe the kinetic processes of the interaction between carriers, plasmons and phonons.