Dielectric Property of MoS2 Crystal in Terahertz and Visible Region

Xianding Yan,Lipeng Zhu,Yixuan Zhou,Yiwen E,Li Wang,Xinlong Xu

DOI: https://doi.org/10.1364/AO.54.006732

2015-05-14

Abstract:Two-dimensional materials such as MoS2 have attracted much attention in recent years due to their fascinating optoelectronic properties. Dielectric property of MoS2 is desired for the optoelectronic application. In this paper, terahertz (THz) time-domain spectroscopy and ellipsometry technology are employed to investigate the dielectric response of MoS2 crystal in THz and visible region. The real and imaginary parts of the complex dielectric constant of MoS2 crystal are found to follow a Drude model in THz region, which is due to the intrinsic carrier absorption. In visible region, the general trend of the complex dielectric constant is found to be described with a Lorentz model, while two remarkable peaks are observed at 1.85 and 2.03 eV, which have been attributed to the splitting arising from the combined effect of interlayer coupling and spin-orbit coupling. This work affords the fundamental dielectric data for the future optoelectronic applications with MoS2.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the dielectric properties of molybdenum disulfide (MoS₂) crystals in the terahertz (THz) and visible light regions. Specifically, the paper measures and analyzes the complex dielectric constant of MoS₂ crystals by experimental means (such as terahertz - time - domain spectroscopy and ellipsometry) and explores the underlying physical mechanisms.

### Main problems:
1. **Dielectric response of MoS₂ in different frequency bands**:
- **THz region**: Study the dielectric response of MoS₂ in the THz frequency range, especially the changing trends of the real and imaginary parts.
- **Visible light region**: Study the dielectric response of MoS₂ in the visible light range, including the changes in the real and imaginary parts of the complex dielectric constant and the underlying physical mechanisms.

2. **Model fitting and interpretation**:
- **THz region**: Use the Drude model to fit the dielectric response in the THz region and explain the influence of free - carrier absorption on the dielectric properties.
- **Visible light region**: Use the Lorentz model to fit the dielectric response in the visible light region and explain the splitting effect caused by inter - layer coupling and spin - orbit coupling.

3. **Acquisition and analysis of experimental data**:
- Directly measure the dielectric constant of MoS₂ crystals through terahertz - time - domain spectroscopy (THz - TDS) and ellipsometry (ellipsometry), provide accurate basic data, and support future optoelectronic applications.

### Key points of the solution:
- **THz region**: It is found that the real and imaginary parts of the complex dielectric constant of MoS₂ conform to the Drude model, indicating that free - carrier absorption is the main mechanism. In addition, parameters such as carrier mobility and plasma frequency are calculated.
- **Visible light region**: It is found that the real and imaginary parts of the complex dielectric constant conform to the Lorentz model, and two significant peaks are observed at 1.85 eV and 2.03 eV, which are attributed to the combined effect of inter - layer coupling and spin - orbit coupling.

### Main contributions of the paper:
- Provide detailed dielectric property data of MoS₂ in the THz and visible light regions, providing important basic data for the future design of MoS₂ - based optoelectronic devices.
- Verify theoretical models (such as Drude and Lorentz models) through experiments and explain the dielectric response mechanism of MoS₂, laying the foundation for further research and application.

### Formula summary:
- **Drude model**:
\[
\varepsilon(\omega)=\varepsilon_{\infty}-\frac{\omega_p^2}{\omega^2 + i\Gamma\omega}
\]
where \(\varepsilon_{\infty}\) is the high - frequency dielectric constant, \(\omega_p\) is the plasma frequency, and \(\Gamma\) is the damping coefficient.

- **Lorentz model**:
\[
\varepsilon(\omega)=\varepsilon_{\infty}+\sum_j\frac{S_j\omega_j^2}{\omega_j^2-\omega^2 - i\Gamma_j\omega}
\]
where \(\varepsilon_{\infty}\) is the high - frequency dielectric constant, \(S_j\) is the oscillation strength, \(\omega_j\) is the resonance frequency, and \(\Gamma_j\) is the damping coefficient.

These research results not only help to understand the basic physical properties of MoS₂, but also provide an important reference for the development of new optoelectronic devices.