Abstract:Indium selenide (InSe) has become a research hotspot because of its favorable carrier mobility and thickness-tunable band gap, showing great application potential in high-performance optoelectronic devices. The trend of miniaturization in optoelectronics has forced the feature sizes of the electronic components to shrink accordingly. Therefore, atomically thin InSe crystals may play an important role in future optoelectronics. Given the instability and ultralow photoluminescent (PL) emission of mechanically exfoliated ultrathin InSe, synthesis of highly stable mono- and few-layer InSe nanosheets with high PL efficiency has become crucial. Herein, ultrathin InSe nanosheets were prepared via thermal annealing of electrochemically intercalated products from bulk InSe. The size and yield of the as-prepared nanosheets were up to ∼160 μm and ∼70%, respectively, and ∼80% of the nanosheets were less than five layer. Impressively, the as-prepared nanosheets showed greatly enhanced stability and PL emission because of surface modification by carbon species. Efficient photoresponsivity of 2 A/W was achieved in the as-prepared nanosheet-based devices. These nanosheets were further assembled into large-area thin films with photoresponsivity of 16 A/W and an average Hall mobility of about 5 cm2 V–1 s–1. Finally, one-dimensional (1D) InSe nanoscrolls with a length up to 90 μm were constructed by solvent-assisted self-assembly of the exfoliated nanosheets.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c03556?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c03556</a>.Photographs of bulk InSe before and after intercalation; optical images of exfoliated nanosheets; EDS spectrum of pristine InSe; TEM and spectral characterization and optoelectronic performance of CTAB-InSe; elemental analysis results; stacking misalignment and moiré patterns in restacked M-InSe nanosheets; effect of CTAB intercalation and post-annealing on PL emission of few-layer InSe; PL and morphological stability of few-layer InSe; characterization of M-InSe thin films; optical images of M-InSe nanoscrolls (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c03556/suppl_file/nn0c03556_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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