Abstract:NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology scaling, and (2) multi-level (e.g., MLC, TLC) cell data coding. Unfortunately, the reliability of raw data stored in flash memory has also continued to become more difficult to ensure, because these two trends lead to (1) fewer electrons in the flash memory cell (floating gate) to represent the data and (2) larger cell-to-cell interference and disturbance effects. Without mitigation, worsening reliability can reduce the lifetime of NAND flash memory. As a result, flash memory controllers in solid-state drives (SSDs) have become much more sophisticated: they incorporate many effective techniques to ensure the correct interpretation of noisy data stored in flash memory cells. In this article, we review recent advances in SSD error characterization, mitigation, and data recovery techniques for reliability and lifetime improvement. We provide rigorous experimental data from state-of-the-art MLC and TLC NAND flash devices on various types of flash memory errors, to motivate the need for such techniques. Based on the understanding developed by the experimental characterization, we describe several mitigation and recovery techniques, including (1) cell-to-cell interference mitigation, (2) optimal multi-level cell sensing, (3) error correction using state-of-the-art algorithms and methods, and (4) data recovery when error correction fails. We quantify the reliability improvement provided by each of these techniques. Looking forward, we briefly discuss how flash memory and these techniques could evolve into the future.

Writing on dirty flash memory

Design of BCH Encoder/Decoder for NAND Flash Controller

Modulation Coding for Flash Memories

Rank-Modulation Rewrite Coding for Flash Memories

TCSE: A Target Cell States Elimination Coding Strategy for Highly Reliable Data Storage Based on 3-D NAND Flash Memory

Channel Modeling and Quantization Design for 3D NAND Flash Memory

Data Placement Through Clustering Sequential Writes and Isolating Cold Pages for Write Amplification Reduction in NAND Flash Memory

Realizing Unequal Error Correction for Nand Flash Memory at Minimal Read Latency Overhead

Architectural Techniques for Improving NAND Flash Memory Reliability

Write Activity Reduction on Flash Main Memory Via Smart Victim Cache

Exploit Imbalanced Cell Writes to Mitigate Write Disturbance in Dense Phase Change Memory

A Cache Management Strategy to Replace Wear Leveling Techniques for Embedded Flash Memory

The erasion and writing of off-chip flash memories using memory imaging

Refactored Design of I/O Architecture for Flash Storage

True-Damage-Aware Enumerative Coding for Improving Nand Flash Memory Endurance

Reaping Both Latency and Reliability Benefits With Elaborate Sanitization Design for 3D TLC NAND Flash

Error Correction Codes and Signal Processing in Flash Memory

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories

Error Characterization, Mitigation, and Recovery in Flash Memory Based Solid-State Drives

Characterizing, Exploiting, and Mitigating Vulnerabilities in MLC NAND Flash Memory Programming

On the Case of Using Aggregated Page Programming for Future MLC NAND Flash Memory