Semiconductor nanowires studied by photocurrent spectroscopy

Nadine Erhard,Alexander Holleitner

DOI: https://doi.org/10.48550/arXiv.1409.0300

2014-09-01

Abstract:Photocurrent spectroscopy is a versatile technique to identify and understand the optoelectronic dynamics occurring in semiconductor nanowires. Conventional photocurrent spectroscopy allows to explore the morphology and material properties of nanowires as well as their contact interfaces. Using time-resolved photocurrent spectroscopy one gets additional information on the multiple photocurrent generation mechanisms and their respective timescales. This chapter discusses various aspects of the photocurrent spectroscopy and it summarizes the physical mechanisms behind the photocurrent and photoconductance effects in semiconductor nanowires.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the photodynamic processes in semiconductor nanowires through photocurrent spectroscopy. Specifically, the authors aim to:

1. **Identify and understand the photodynamics in semiconductor nanowires**: Through photocurrent spectroscopy techniques, study the morphology, material properties and contact interfaces of nanowire materials, and reveal how these factors affect the generation mechanism of photocurrent.

2. **Explore the photocurrent generation mechanisms on different time scales**: Use time - resolved photocurrent spectroscopy to obtain information on multi - scale photocurrent generation mechanisms, including the photothermoelectric effect, displacement current, transport of photogenerated carriers, and the photo - Dember effect, etc.

3. **Summarize the physical mechanisms**: Summarize the physical mechanisms behind photocurrent and photoconductivity effects in semiconductor nanowires, including absorption, electronic band structure, transport dynamics and thermoelectric effects, etc.

4. **Analyze the influence of different morphologies on photocurrent**: Explore the influence of the geometry of nanowires (such as one - dimensional quantum - confined structures with diameters less than the Bohr radius), differences in crystal structures (such as strain - free heterostructures), and the large surface - to - volume ratio on the photoelectric response.

5. **Evaluate the application potential**: Provide theoretical support for the design of nanowire - based photodetectors, optical switches, solar cells and high - speed transistors, especially for future applications in photovoltaic devices, photodetectors and optical sensors.

### Formula Examples
The formulas mentioned in the paper are as follows:

- **Current formula for the photothermoelectric effect**:
\[
I_{\text{Thermo}}=(S_{\text{nanowire}} - S_{\text{contact}})\Delta T/R
\]
where \( S_{\text{nanowire}} \) and \( S_{\text{contact}} \) are the Seebeck coefficients of the nanowire and the metal contact respectively, \( \Delta T \) is the temperature difference, and \( R \) is the total resistance of the circuit.

- **Polarization anisotropy formula**:
\[
\rho=\frac{I_{\parallel}-I_{\perp}}{I_{\parallel}+I_{\perp}}
\]
where \( I_{\parallel} \) and \( I_{\perp} \) are the photocurrents in the light polarization directions parallel and perpendicular to the nanowire respectively.

Through the research of these problems, the authors hope to gain a deeper understanding of the photoelectric phenomena in semiconductor nanowires and provide theoretical and technical support for their applications in various photoelectric devices.