Organic magnetoresistance from deep traps

Nicholas J. Harmon,Michael E. Flatté
DOI: https://doi.org/10.1063/1.4891476
2014-07-23
Abstract:We predict that singly-occupied carrier traps, produced by electrical stress or irradiation within organic semiconductors, can cause spin blockades and the large room-temperature magnetoresistance known as organic magnetoresistance. The blockade occurs because many singly-occupied traps can only become doubly occupied in a spin-singlet configuration. Magnetic-field effects on spin mixing during transport dramatically modify the effects of this blockade and produce <a class="link-external link-http" href="http://magnetoresistance.We" rel="external noopener nofollow">this http URL</a> calculate the quantitative effects of these traps on organic magnetoresistance from percolation theory and find a dramatic nonlinear dependence of the saturated magnetoresistance on trap density, leading to values $\sim$ 20%, within the theory's range of validity.
Mesoscale and Nanoscale Physics
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