Organic magnetoresistance from deep traps

Nicholas J. Harmon,Michael E. Flatté

DOI: https://doi.org/10.1063/1.4891476

2014-07-23

Abstract:We predict that singly-occupied carrier traps, produced by electrical stress or irradiation within organic semiconductors, can cause spin blockades and the large room-temperature magnetoresistance known as organic magnetoresistance. The blockade occurs because many singly-occupied traps can only become doubly occupied in a spin-singlet configuration. Magnetic-field effects on spin mixing during transport dramatically modify the effects of this blockade and produce <a class="link-external link-http" href="http://magnetoresistance.We" rel="external noopener nofollow">this http URL</a> calculate the quantitative effects of these traps on organic magnetoresistance from percolation theory and find a dramatic nonlinear dependence of the saturated magnetoresistance on trap density, leading to values $\sim$ 20%, within the theory's range of validity.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explain the significant magnetoresistance (organic magnetoresistance, OMAR) phenomenon at room temperature in organic semiconductor materials. Specifically, the author proposes a new theoretical mechanism, that is, singly - occupied carrier traps (generated by electrical stress or irradiation) can lead to spin - blocking, and this blocking effect will change significantly under the action of a magnetic field, thus generating large magnetoresistance.

### Main problems and solutions

1. **Problem description**:
- Many organic materials exhibit magnetoresistance (OMAR) as high as 20% at room temperature. This phenomenon is considered to be the influence of the Pauli exclusion principle on slowly - hopping carrier pairs.
- Previous theories mainly focused on the bipolaron mechanism or the exciton mechanism, but these mechanisms rely on carrier - carrier interactions and cannot fully explain the experimentally observed phenomena.
- Experiments show that long - term high - current driving can increase the magnetoresistance from 1% to over 15%, which may be due to deep traps generated by electrical stress or irradiation.

2. **Proposed solutions**:
- The author proposes that singly - occupied carrier traps (especially deep traps) are the main cause of OMAR, rather than free polarons or excitons.
- These traps affect carrier transport through the spin - blocking mechanism. When the spin state in the trap changes from a triplet state to a singlet state, carriers are allowed to continue to be transported, thus generating the magnetoresistance effect.
- The author uses percolation theory to calculate the influence of traps on OMAR and finds that there is a significant non - linear relationship between trap density and saturated magnetoresistance, which can reach up to about 20%.

### Key assumptions and models

- **Trap distribution**: It is assumed that traps are uniformly and randomly distributed in the organic layer.
- **Trap occupation**: It is assumed that after a sufficient long - time current driving, most traps are singly - occupied.
- **Temperature conditions**: It is assumed that the temperature is high enough so that most sites are accessible (f, g ≈ 1).
- **Spin - conversion probability**: The spin - conversion probability \( p_{T \rightarrow S}(\omega_0) \) from a triplet state to a singlet state is considered, which is affected by an external magnetic field.

### Conclusion

Through theoretical calculations and the support of experimental data, the author proves that singly - occupied carrier traps are the main source of OMAR, rather than free polarons or excitons. This theory not only explains the magnetoresistance phenomena observed in experiments but also provides a new perspective for understanding and designing organic semiconductor materials with high magnetoresistance characteristics.

### Formula summary

- **Effective site concentration**:
\[
N'_{\text{eff}} = f(N_0 + N_S) + g(N^t_0 + N^t_S)
\]
\[
N_{\text{eff}} = f(N_0 + N_S + N_T - N_T(1 - \alpha p_{T \rightarrow S})) + g(N^t_0 + N^t_S + N^t_T - N^t_T(1 - \alpha p_{T \rightarrow S}))
\]

- **Spin - conversion probability**:
\[
p_{T \rightarrow S}(\omega_0) = \frac{1}{3} \left( 1 - \sum_m \left| P_{mm}^S \right|^2 \frac{1/\tau_h}{(\omega_m' - \omega_m)^2 + 1/\tau_h^2} \right)
\]

- **Magnetoresistance formula**:
\[
MR = \frac{e^{2y_c(\omega_0)}}{e^{2y_c(0)}} - 1
\]

These formulas show the complex relationships among trap density, spin - conversion probability, and magnetoresistance, further supporting the theoretical mechanism proposed by the author.