Abstract:Thermoelectric material is a new type of functional material that can realize the direct conversion between heat energy and electric energy. It has received a lot of attention because it has wide practical applications. However, the applications of thermoelectric devices are limited by their low conversion efficiencies. The conversion efficiency is determined mainly by the thermoelectric properties of the material. In this work, a compound of CuGaTe2 chalcopyrite is selected as a research object, and a series of Ni-doped samples Cu1–xNixGaTe2 (x = 0–0.75%) is synthesized by the vacuum melting method. The temperature dependent thermal and electrical properties for Cu1–xNixGaTe2 (x = 0–0.75%) compounds are investigated. The results show that the Ni atom can effectively replace the Cu atom of the material, and thus leading the carrier concentration to decrease slightly and inducing the mobility to increase. At the same time, the Seebeck coefficient increases significantly after Ni doping: on the one hand, the increase is due to the decrease of the carrier concentration of the sample; on the other hand, the effective increase of the density of states near the Fermi level plays an important role in increasing Seebeck coefficient. Then, the thermal conductivity decreases effectively due to the enhancement of point defect scattering caused by Ni doping, and the minimum lattice thermal conductivity is reduced by ~30% in comparison with the matrix lattice thermal conductivity. Finally, the maximum ZT value for Cu0.095Ni0.005GaTe2 sample (ZT = 1.26 at 873 K) is obtained to be ~56% larger than that for CuGaTe2. This work indicates that the doping magnetic element Ni at Cu site is also one of the effective ways to improve the thermoelectric properties of CuGaTe2 materials.

Potential thermoelectric performance of hole-doped Cu2O

High thermoelectric performance from optimization of hole-doped CuInTe2

High Performance Thermoelectric Materials Based on Metal Organic Coordination Polymers Through First‐principles Band Engineering

Double perovskite Pr2CoFeO6 thermoelectric oxide: Roles of Sr-doping and Micro/nanostructuring

High Performance Oxides-Based Thermoelectric Materials

Optimization of Thermoelectric Transport Performance of Nickel-Doped CuGaTe2

High-Performance Thermoelectric Oxides Based on Spinel Structure

Perovskite Manganites and Layered Cobaltites: Potential Materials for Thermoelectric Applications

Enhancing Thermoelectric Performance of CuInTe2 via Trace Ag Doping at Indium Sites

Chemical Bonding Engineering for High-Symmetry Cu2S-based Materials with High Thermoelectric Performance

Theoretical Investigation on Thermoelectric Properties of Cu-Based Chalcopyrite Compounds

Anomalous thermal transport and high thermoelectric performance of Cu-based vanadate CuVO3

P-type doping of transition metal elements to optimize the thermoelectric properties of CuGaTe2

Realizing High Thermoelectric Performance and Thermal Stability in CuInTe2 Through Heavy Dose Mg Doping

Unconventional Doping Effect Leads to Ultrahigh Average Thermoelectric Power Factor in Cu 3 SbSe 4 ‐Based Composites

Highly stabilized thermoelectric performance in natural minerals

Ultralow lattice thermal conductivity induced high thermoelectric performance in the δ-Cu2S monolayer

Realizing High Thermoelectric Performance in Cu2Te Alloyed Cu1.15In2.29Te4

High Thermoelectric Performance in Chalcopyrite Cu1- xAgxGaTe2-ZnTe: Nontrivial Band Structure and Dynamic Doping Effect

Polycrystalline Bicuseo Oxide As A Potential Thermoelectric Material