Large magnetoresistance and de Haas–van Alphen oscillations in the topological semimetal candidates Ba X 4 ( X = Ga , In )

Huan Wang,Sheng Xu,Xiao-Qin Lu,Zheng-Yi Dai,Yi-Yan Wang,Xiao-Yan Wang,Xiang-Yu Zeng,Jun-Fa Lin,Kai Liu,Zhong-Yi Lu,Tian-Long Xia
DOI: https://doi.org/10.1103/physrevb.104.205119
IF: 3.7
2021-11-16
Physical Review B
Abstract:We report the magnetoresistance (MR), de Haas–van Alphen (dHvA) oscillations, and first-principles calculation studies on topological semimetal candidates BaX4 (X=Ga, In). Large unsaturated MR that reaches 3×103% in BaGa4 and 4×104% in BaIn4 are observed, which is due to the carrier compensations and high mobility. Evident dHvA oscillations are detected with B//[001] configuration, from which the quantum mobilities are extracted. The light cyclotron effective masses are extracted from the fitting of the thermal damping term in the LK formula. According to the first-principles calculations, BaX4 possesses several Dirac points in the absence of spin-orbit coupling (SOC), some of which open negligible gaps when SOC is considered. The Z2 invariants of BaX4 are equal to 1, indicating the nontrivial topological properties.
physics, condensed matter, applied,materials science, multidisciplinary
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