Abstract:Material crystallinity is paramount in determining the photoelectric performances and device applications. Moreover, a high-quality crystalline layer, especially a multilayer film or a heteroepitaxial film, is continuously explored to cater for low defect density and ultrahigh structure integrity as well as low cost, yet is challenging. In this study, the crystallization effect of Ge/Si heteroepitaxial nanofilms (<100 nm) is investigated in detail to pursue low crystallization temperature and the underlying mechanism. It is demonstrated that the crystallinity and the crystallographic orientation of the underlying layer can tune the crystallization behavior of the upper-layer film. This interfacial inducing effect on crystallization originating from the buffer layer is verified on inversed architecture of the Si/Ge film and is proposed to be the microcrystal-induced crystallization (MIC) effect. Based on a point-defect model describing an order/disorder microcrystal structure, the MIC effect is flexibly supported by the results of binding energy and charge transfer via first-principles calculations for the first time. This work also provides a facile strategy and theoretical support to prepare high-crystalline multilayer films or intact crystals for urgent microelectronics and optoelectronics applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00373.Ge–Ge peak fitting and crystallinity of the Ge/a-Si specimen in Raman spectra, AFM images of samples prepared at different conditions, Raman spectra of different samples, crystallinity trend and the graph of root-mean-square (RMS) surface roughness, XRD spectra and the X-ray diffraction data of the 300 nm Ge film, unoptimized atomic structures of Ge microcrystalline, optimized atomic structures and differential charge densities, and specific values of binding energy and charge transfer (PDF)This article has not yet been cited by other publications.

Near-surface viscosity and complex crystal growth behavior in Se90Te10 thin films and bulk surface

Beyond the Surface: Interconnection of Viscosity, Crystal Growth, and Diffusion in Ge25Se75 Glass-Former

Beyond the Surface: Interconnection of Viscosity, Crystal Growth, and Diffusion in Ge 25 Se 75 Glass-Former

Grain growth of CZTSSe via nanocrystal selenization

Native Crystal Growth Revealed by a Joint Microscopy–Calorimetry Technique in (GeS 2 ) 0.1 (Sb 2 S 3 ) 0.9 Thin Amorphous Films: A Critical Role of Internal Stress and Mechanical Defects

Crystalline Liquid-like Behavior: Surface-Induced Secondary Grain Growth of Photovoltaic Perovskite Thin Film

Theoretical studies on surface kinetics and growth properties of Sb<sub>2</sub>Se<sub>3</sub> and Sb<sub>2</sub>S<sub>3</sub>

Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Increasing the Collection Efficiency in Selenium Thin-Film Solar Cells Using a Closed-Space Annealing Strategy

Tuning the crystalline orientation of quasi 1D anisotropic Sb 2 Se 3 as a function of growth temperature for thin film photovoltaic applications

Micro-Structure Changes Caused by Thermal Evolution in Chalcogenide GexAsySe1−x−y Thin Films by In Situ Measurements

Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment

Surface properties of epitaxially grown crystals

Laser-Annealing and Solid-Phase Epitaxy of Selenium Thin-Film Solar Cells

Growth Of High Quality Znse Single Crystal

Growth of SnSe Single Crystal Via Vertical Vapor Deposition Method and Characterization of Its Thermoelectric Performance

Effect of annealing temperature on the microstructural and optical properties of newly developed (Ag,Cu)2Zn(Sn,Ge)Se4 thin films

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films

Grain‐Boundary Elimination via Liquid Medium Annealing toward High‐Efficiency Sb2Se3 Solar Cells