Abstract:High-quality electronic-grade intrinsic chemical- vapor-deposited (CVD) single-crystal diamond layers having exceptionally high carrier mobilities have been reported by Isberg et al. This makes the realization of novel electronic devices in diamond, particularly for high-voltage and high-temperature applications, a viable proposition. As such, material models which can capture the particular features of diamond as a semiconductor are required to analyze, optimize, and quantitatively design new devices. For example, the incomplete ionization of boron in diamond and the transition to metallic conduction in heavily boron-doped layers require accurate carrier freeze-out models to be included in the simulation of diamond devices. Models describing these phenomena are proposed in this paper and include numerical approximation of intrinsic diamond which is necessary to formulate doping- and temperature-dependent mobility models. They enable a concise numerical description of single-crystal diamond which agrees with data obtained from material characterization. The models are verified by application to new Schottky m-i-p+ diode structures in diamond. Simulated forward characteristics show excellent correlation with experimental measurements. In spite of the lack of impact ionization data for single-crystal diamond, approximation of avalanche coefficient parameters from other wide-bandgap semiconductors has also enabled the reverse blocking characteristics of diamond diodes to be simulated. Acceptable agreement with breakdown voltage from experimental devices made with presently available single-crystal CVD diamond is obtained.

Mathematical Modeling of Graphite-to-Diamond Transition

Nano-polycrystalline diamond formation under ultra-high pressure

Coherent interfaces with mixed hybridization govern direct transformation from graphite to diamond

Nucleation mechanism for the direct graphite-to-diamond phase transition

A Revisited Mechanism of the Graphite-to-Diamond Transition at High Temperature

Theoretical Study on Phase Transition of Various Graphitic Structures under High Pressure

Old Story New Tell: The Graphite to Diamond Transition Revisited

Shear-promoted Graphite-to-diamond Phase Transition at the Grain Boundary of Nanocrystalline Graphite

Graphite to ultrafine nanocrystalline diamond phase transition model and growth restriction mechanism induced by nanosecond laser processing

Monodispersed Transition Metals Induced Ordinary-Pressure Phase Transformation from Graphite to Diamond: A First-Principles Calculation

Role of fluctuation, disorder and catalyst in graphite-diamond transition

Graphitization of Diamond Powders of Different Sizes at High Pressure–high Temperature

EET Theory Analysis of Direct Transformation from Graphite to Diamond at Ultra High-pressure and High-temperature

Atomistic Evidence of Nucleation Mechanism for the Direct Graphite-to-Diamond Transformation

Melting and Structural Evolution of Palladium and Graphite-supported Palladium Nanoclusters : A Molecular Dynamics Simulation Study

Thermally Induced Hex-Graphene Transitions in 2D Carbon Crystals

Modeling of the Electron Field Emission Process in Polycrystalline Diamond and Diamond-Like Carbon Thin Films

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

An Ab Initio Study on the Transition Paths from Graphite to Diamond under Pressure.

Thermodynamic Modeling of Radioactive Graphite Heating in Nitrogen and Oxygenized Air

Computer Simulation of Carbonization and Graphitization of Coal