Substrate Induced p–n Transition for Inverted Perovskite Solar Cells

Zhengbo Cui,Wen Li,Bo Feng,Yunfei Li,Xuemin Guo,Haobo Yuan,Qiang Weng,Tengyi You,Wenxiao Zhang,Xiaodong Li,Junfeng Fang
DOI: https://doi.org/10.1002/adma.202410273
IF: 29.4
2024-08-18
Advanced Materials
Abstract:Substrate‐induced re‐growth strategy is proposed to induce p‐ to n‐transition of perovskite surface. Bulk perovskite grows on ITO/P3CT‐N and shows p‐type, while its surface re‐grows on ITO/SnO2 and transits to n‐type, introducing an interfacial junction. Resulting inverted perovskite solar cells exhibit >25% efficiency with good stability, retaining 90% of initial efficiency after MPP tracking for 800 h at 65 °C. The p‐ or n‐type property of semiconductor materials directly determine the final performance of photoelectronic devices. Generally, perovskite deposited on p‐type substrate tends to be p‐type, while perovskite deposited on n‐type substrate tends to be n‐type. Motived by this, a substrate‐induced re‐growth strategy is reported to induce p‐ to n‐transition of perovskite surface in inverted perovskite solar cells (PSCs). p‐type perovskite film is obtained and crystallized on p‐type substrate first. Then an n‐type ITO/SnO2 substrate with saturated perovskite solution is pressed onto the perovskite film and annealed to induce the secondary re‐growth of perovskite surface region. As a result, p‐ to n‐type transition happens and induces an extra junction at perovskite surface region, thus enhancing the built‐in potential and promoting carrier extraction in PSCs. Resulting inverted PSCs exhibit high efficiency of over 25% with good operational stability, retaining 90% of initial efficiency after maximum power point (MPP) tracking for 800 h at 65 °C with ISOS‐L‐2 protocol.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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