Abstract:Nanoscale variations of optical properties in transition metal dichalcogenide (TMD) monolayers can be explored with cathodoluminescence (CL) and electron energy loss spectroscopy (EELS) using electron microscopes. To increase the CL emission intensity from TMD monolayers, the MoSe 2 flakes are encapsulated in hexagonal boron nitride (hBN), creating van der Waals (VdW) heterostructures. Until now, the studies have been exclusively focused on scanning transmission electron microscopy (STEM-CL) or scanning electron microscopy (SEM-CL), separately. Here, we present results, using both techniques on the same sample, thereby exploring a large acceleration voltage range. We correlate the CL measurements with STEM-EELS measurements acquired with different energy dispersions, to access both the low-loss region at ultra-high spectral resolution, and the core-loss region. This provides information about the weight of the various absorption phenomena including the direct TMD absorption, the hBN interband transitions, the hBN bulk plasmon, and the core losses of the atoms present in the heterostructure. The S(T)EM-CL measurements from the TMD monolayer only show emission from the A exciton. Combining the STEM-EELS and S(T)EM-CL measurements, we can reconstruct different decay pathways leading to the A exciton CL emission. The comparison with SEM-CL shows that this is also a good technique for TMD heterostructure characterization, where the reduced demands on sample preparation are appealing. To demonstrate the capabilities of SEM-CL imaging, we also measured on a SiO 2 /Si substrate, quintessential in the sample preparation of two-dimensional materials, which is electron-opaque and can only be measured in SEM-CL. The CL-emitting defects of SiO 2 make this substrate challenging to use, but we demonstrate that this background can be suppressed by using lower electron energy.

Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures

Cathodoluminescence emission and electron energy loss absorption from a 2D transition metal dichalcogenide in van der Waals heterostructures

Nano-optics of transition metal dichalcogenides and their van der Waals heterostructures with electron spectroscopies

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

A Monolithically Sculpted Van Der Waals Nano-Opto-electro-mechanical Coupler

Interlayer Charge Transfer and Defect Creation in Type I van der Waals Heterostructures

Nanoscale optical imaging of multi-junction MoS2-WS2 lateral heterostructure

Carbon-Nanotube-Confined Vertical Heterostructures with Asymmetric Contacts

Direct Optical-Structure Correlation in Atomically Thin Dichalcogenides and Heterostructures

Nano-spectroscopy of excitons in atomically thin transition metal dichalcogenides

High resolution imaging of reconstructed domains and moire patterns in functional van der Waals heterostructure devices

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS 2 Heterobilayers

Cavity electrodynamics of van der Waals heterostructures

Nano-ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots

Synthesis and Spectral Characteristics Investigation of the 2D-2D vdWs Heterostructure Materials

Convergent beam electron holography for analysis of van der Waals heterostructures

Scanning Cathodoluminescence Microscopy: Applications in Semiconductor and Metallic Nanostructures

Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots

Van Der Waals Nanomesh Electronics on Arbitrary Surfaces

Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope

Electron-Driven In Situ Transmission Electron Microscopy of 2D Transition Metal Dichalcogenides and Their 2D Heterostructures