Abstract:In this research, we introduce and quantitatively evaluate an ultrawideband and ultrathin terahertz (THz) absorber composed of a silicon substrate sandwiched between an all-silicon resonator layer on top and a graphite layer on bottom. We explored the absorption process by simulating the absorber's absorption spectra under various structural parameters using the commercial CST Studio program. Furthermore, the absorption response at varied incidence angles ranging from 0 to 80 degrees has been studied. It has been noted that when the absorber fulfills the impedance matching principle, it may result in a nearly perfect absorption response. This absorber has exceptional performance due to its wide absorption bandwidth of 6.5 THz, which is a relative bandwidth of 102% ̇It has a remarkable absorption performance of over 90% within the frequency range of 2.7 THz to 9.2 THz. Additionally, the absorber possesses a polarization-independent feature as a result of the excellent structural symmetry. The proposed absorber may also be employed as a terahertz sensor by simply altering the dielectric permittivity of the observing material across a wide frequency range. Silicon-based metamaterial absorbers are an alternative to metal-Silicon-based metamaterial absorbers present a superior alternative to metal and dielectric sandwiched absorbers. These absorbers effectively bypass the drawbacks associated with metal, such as high conduction losses and thermal conductance, low melting points, etc. As a result, they represent a highly promising option for optical applications, including sensors, modulators, and photoelectric detection devices.

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