Abstract:We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory and we report here : (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand and regulate the spin - orbit torque in dilute magnetic semiconductors (DMS). Specifically, the authors studied the spin - orbit torque caused by the inherent linear Dresselhaus spin - orbit coupling in monolayer III - V dilute magnetic semiconductors. Through this research, they hope to reveal the following points: 1. **Strong correlation between the angular dependence of spin - orbit torque and the anisotropy of the Fermi surface**: - The authors found that the angular dependence of spin - orbit torque is closely related to the shape of the Fermi surface. When the Fermi surface is spherical (i.e., \(\gamma_2=\gamma_3\)), the angular dependence of spin - orbit torque presents a simple cosine function form \(T\propto\cos\theta\). - When the Fermi surface deviates from spherical (i.e., \(\gamma_3\neq\gamma_2\)), the angular dependence of spin - orbit torque will become more complex, with additional oscillations. 2. **Non - linear dependence of spin - orbit torque on exchange coupling**: - Research shows that spin - orbit torque not only depends on the exchange coupling constant \(J_{pd}\), but also this dependence is non - linear. In the weak exchange coupling region, the torque increases as \(J_{pd}\) increases; but in the medium and strong exchange coupling regions, the torque will first increase, then decrease, and finally tend to be stable. 3. **Differences in spin - orbit torque in different materials**: - The authors compared two typical DMS materials: (Ga,Mn)As and (In,Mn)As. Although these two materials are similar in exchange coupling and magnetic properties, due to differences in band structure, lattice constant and Fermi level, their spin - orbit torques show significant differences. For example, under the same conditions, the spin - orbit torque of (In,Mn)As is approximately twice as large as that of (Ga,Mn)As. 4. **Effect of doping on spin - orbit torque**: - By changing the hole concentration, the magnitude of spin - orbit torque can be adjusted. In the weak spin - orbit coupling region, the change of torque with hole concentration \(p\) roughly follows the law of \(p^{1/3}\); while in the strong spin - orbit coupling region, this relationship will deviate from \(p^{1/3}\). In conclusion, this paper aims to deeply understand the physical mechanism of spin - orbit torque in dilute magnetic semiconductors and explore the possibility of regulating these torques through material design and doping, thereby providing theoretical guidance for the development of spintronic devices based on dilute magnetic semiconductors.

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