Gas phase condensation of few-layer graphene with rotational stacking faults in an electric-arc

Soumen Karmakar,Ashok B. Nawale,Niranjan P. Lalla,Vasant G. Sathe,Vikas L. Mathe,Asoka K. Das,Sudha V. Bhoraskar
DOI: https://doi.org/10.48550/arXiv.1208.2439
2012-08-13
Abstract:We report the synthesis efficiency of few-layer graphene (FLG) in an external magnetic field modulated DC carbon arc in different non-reactive buffer gases. The effects of buffer gases on the anode erosion rate and the cathode deposit (CD) formation rate have been investigated during the synthesis of FLG. The constituents of the as-synthesized CDs were investigated using transmission electron microscopy, selected area electron diffraction, Raman spectroscopy and X-ray diffraction analysis. A plausible growth mechanism of such FLG is predicted. The results indicate that, under a parametrically optimized condition, an electric-arc of this kind can efficiently generate FLG with rotational stacking faults at a production-rate of few g/min. A guideline for controlling the number of layers of such FLG has also been suggested.
Materials Science,Plasma Physics
What problem does this paper attempt to address?
The main problems that this paper attempts to solve are to explore the method of synthesizing few - layer graphene (FLG) with rotational stacking faults in arc plasma and to study the influence of different non - reactive buffer gases on the synthesis process. Specifically, the author focuses on the following aspects: 1. **Improving synthesis efficiency**: By optimizing experimental conditions, such as external magnetic field modulation, different buffer gas types and ratios, to achieve efficient FLG synthesis. 2. **Controlling the number of layers and stacking mode**: Research on how to control the number of layers of FLG and its internal rotational stacking faults by adjusting experimental parameters. 3. **Environmental friendliness**: Look for an environmentally - friendly synthesis method, avoid using toxic chemicals and reduce the generation of harmful waste and gases. ### Specific problem description - **Synthesis efficiency**: The author studied the influence of different buffer gases (such as Ar, He, N₂ and their mixtures) on the anode erosion rate and the cathode deposit (CD) formation rate. These parameters directly affect the generation rate and quality of FLG. - **Anode erosion rate**: The anode erosion rates under different buffer gases are different, which is related to the enthalpy change of the plasma state. - **CD formation rate**: The thermal conductivity and diffusion coefficient of the buffer gas affect the CD formation rate and conversion efficiency (ηCD). - **Structural characterization**: Analyze the microstructure and crystallographic characteristics of the synthesized FLG by means of transmission electron microscopy (TEM), selected - area electron diffraction (SAED), Raman spectroscopy and X - ray diffraction (XRD). - **TEM analysis**: Observe the thickness and morphology of FLG sheets, and whether there are other carbon nanostructures (such as nanotubes, onion - like particles, etc.). - **SAED pattern**: Reveal the stacking mode of FLG, especially the existence of rotational stacking faults. - **Raman spectroscopy**: Evaluate the crystallinity and defect situation of FLG through the position and intensity of the D - band, G - band and 2D - band. - **XRD analysis**: Confirm the crystal structure of FLG and verify that it is multi - layer graphene rather than three - dimensional graphite. ### Conclusion The paper shows that under optimized conditions, the arc plasma method can efficiently generate FLG with rotational stacking faults, and the number of layers and stacking mode of FLG can be regulated by selecting appropriate buffer gases. In addition, this method has a relatively high productivity (several grams per minute) and is relatively environmentally friendly without the use of toxic chemicals. Through the above research, the author provides important guidance for the large - scale production and application of FLG, especially in application fields that require precise control of the number of graphene layers and stacking mode.