Abstract:The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the development of detectors and modulators operating in the Terahertz (THz) region of the electromagnetic spectrum (wavelengths in the hundreds of micrometers range), which is still severely lacking in terms of solid-state devices. Here we demonstrate efficient THz detectors based on antenna-coupled graphene field-effect transistors (FETs). These exploit the non-linear FET response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature (RT) operation at 0.3 THz, with noise equivalent power (NEP) levels < 30 nW/Hz^(1/2), showing that our devices are well beyond a proof-of-concept phase and can already be used in a realistic setting, enabling large area, fast imaging of macroscopic samples.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a terahertz (THz) detector that can work efficiently at room temperature. Specifically, the authors use graphene field - effect transistors (GFETs) combined with an antenna - coupling structure to achieve the detection of terahertz radiation. Currently, solid - state detectors in the terahertz band have performance deficiencies. For example, commercial terahertz detectors are either very slow in response speed (such as Golay cells and pyroelectric elements) or require extremely low - temperature operation (such as superconducting hot - electron thermometers). In addition, most of the existing fast non - linear electronic devices (such as Schottky diodes) can only work in the frequency range below 1 THz. ### Main problems: 1. **Lack of efficient room - temperature terahertz detectors**: At present, most terahertz detectors require a low - temperature environment or have a slow response speed. 2. **Limitations of existing technologies**: Traditional terahertz detectors perform poorly in the high - frequency band (> 1 THz) and do not have high enough sensitivity. 3. **Exploration of new materials and technologies**: Graphene is considered a very promising material due to its unique optoelectronic properties and can be used to develop high - performance terahertz detectors. ### Solutions: The authors achieved efficient terahertz detection by designing antenna - coupled graphene field - effect transistors (GFETs). Specific methods include: - **Using high - quality graphene**: Graphene has a high carrier mobility and supports weakly damped plasma waves, which makes it very suitable for terahertz detection. - **Antenna - coupling structure**: By designing a specific antenna structure, terahertz radiation is effectively coupled into the GFET, thereby improving the detection efficiency. - **Room - temperature operation**: Experiments show that the designed detector can work at room temperature and has a low noise - equivalent power (NEP < 30 nW/Hz^1/2), showing the potential for practical applications. ### Experimental results: - At a frequency of 0.3 THz, the detector shows good response performance and can achieve rapid imaging, such as imaging experiments on coffee capsule boxes and leaves. - The performance of bilayer - graphene (BLG) - based detectors is better than that of single - layer - graphene (SLG) - based detectors, especially in terms of noise - equivalent power. ### Conclusion: This research demonstrates the efficient performance of graphene - based terahertz detectors at room temperature, providing new ideas and directions for the development of more advanced terahertz technologies in the future.

Graphene field effect transistors as room-temperature Terahertz detectors