Direct Injection of Electrons into Cu Active Sites from Porous Phosphorus-doped g-C 3 N 4 for Enhanced Fenton-like Performance

Aitao Chen,Chao Li,Conghua Liu,Wuzhu Sun
DOI: https://doi.org/10.1016/j.apsusc.2023.157359
IF: 6.7
2023-04-30
Applied Surface Science
Abstract:Copper oxides were supported on porous P-doped g-C 3 N 4 (Cu/p-PCN) by a stepwise calcination process. Elemental analysis, XPS, and ESR results show that P atoms enter the network of g-C 3 N 4 , and the thus-fabricated configuration could provide additional electrons for the conjugated system of g-C 3 N 4 . As verified by TEM, XRD, XPS, and FTIR results, copper is mainly present as oxides on the catalyst surface and undergoes Cu-π interactions with porous P-doped g-C 3 N 4 (p-PCN). During the reaction, unpaired electrons in p-PCN can be injected into the Cu active sites, prompting the decomposition of H 2 O 2 into hydroxyl radicals (•OH). The degradation begins with the activation of H 2 O 2 into •OH radicals by the Cu(I) active center. The depleted Cu(I) centers are then regenerated by electron injection from P atoms rather than by the reaction between H 2 O 2 and Cu(I). Thus, the catalyst performance and H 2 O 2 utilization are greatly enhanced. Equally significantly, the porous structure of Cu/p-PCN also contributes appreciably to its performance by increasing the specific surface area and active sites. Cu/p-PCN exhibits better performance than many reported catalysts in similar conditions, robust resistance to interference from various ions, high degradation efficiency over a wide pH range, and excellent degradation ability for various pollutants.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
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