Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures

Quadrupolar spectra of nuclear spins in strained InGaAs quantum dots

Manipulation of the nuclear spin ensemble in a quantum dot with chirped magnetic resonance pulses

Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots

Strain-assisted Spin Manipulation in a Quantum Well

Nanometer-Scale Nuclear Magnetic Resonance Diffraction with Sub-Ångstrom Precision

Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

High-Resolution Nanoscale Solid-State Nuclear Magnetic Resonance Spectroscopy

Nuclear magnetic resonance inverse spectra of InGaAs quantum dots: Atomistic level structural information

Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

Stroboscopic X-ray Diffraction Microscopy of Dynamic Strain in Diamond Thin-film Bulk Acoustic Resonators for Quantum Control of Nitrogen Vacancy Centers

Strain coupling of a single exciton to a nano-optomechanical resonator

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Seeing is believing: Correlating optoelectronic functionality with atomic scale imaging of single semiconductor nanocrystals

Spin spectroscopy of molecular quantum dots with a radio frequency scanning tunneling microscope

Engineering local strain for single-atom nuclear acoustic resonance in silicon

Quantum Heterodyne Sensing of Nuclear Spins via Double Resonance

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Dynamic strain modulation of a nanowire quantum dot compatible with a thin-film lithium niobate photonic platform

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High-precision mapping of diamond crystal strain using quantum interferometry