C. Stephanos,T. Kopp,J. Mannhart,P. J. Hirschfeld
Abstract:We discuss a scenario for interface-induced superconductivity involving pairing by dipolar excitations proximate to a two-dimensional electron system controlled by a transverse electric field. If the interface consists of transition metal oxide materials, the repulsive on-site Coulomb interaction is typically strong and a superconducting state is formed via exchange of non-local dipolar excitations in the d-wave channel. Perspectives to enhance the superconducting transition temperature are discussed.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the possibility of achieving high - temperature superconductivity under specific interface conditions. Specifically, the author explores the realization of the superconducting state through the interface - induced electron - pairing mechanism. In particular, when these interfaces are composed of transition - metal - oxide materials, whether this mechanism can form a d - wave - paired superconducting state and whether it is possible to increase the superconducting transition temperature.
### Background and Motivation
1. **Progress in the Interface Research of Strongly - Correlated Oxide Systems**:
In recent years, great progress has been made in the preparation and control of the interfaces of strongly - correlated oxide systems. These materials exhibit unusual electronic properties in the bulk state, and the interfaces between different oxides may allow the formation of additional novel states. The sensitivity of these states to external parameters has led to the possibility of precisely quantum - controlling devices based on such interfaces.
2. **Applications of Electric - Field - Effect Devices**:
For example, in the LaAlO₃/SrTiO₃ heterostructure, an electric - field - effect device has been used to switch the two - dimensional electron liquid located at the interface. Recently, it has been discovered that in such a system, a superconducting state can be created and electrostatically modulated, although these temperatures are rather low.
3. **The Exploration of High - Temperature Superconductivity**:
With the discovery of the superconducting transition temperature approaching 60K in iron - based materials, the discussion on how interface phenomena affect superconductivity and whether new high - temperature superconducting mechanisms can be achieved through interfaces with semiconductor or insulating materials has been reignited.
### Main Contributions of the Paper
- **Proposing a New Superconducting Mechanism**:
The author proposes a superconducting mechanism induced by the interface, in which two separated electron systems interact through non - local dipole excitations, thereby forming pairs in the d - wave channel.
- **Specific Description of the Model**:
The model system consists of two layers. The L2 layer contains a two - dimensional electron system, and the L1 layer contains a localized two - level system (modeled as a dipole). The external electric field not only affects the carrier density in the L2 layer but also polarizes the two - level system in the L1 layer.
- **Construction of the Hamiltonian**:
The paper elaborately derives the Hamiltonian of the system, including the electron motion term, the Coulomb repulsion term between electrons, the energy term of the two - level system, the coupling term between the electric field and the two - level system, the interaction term between two - level systems, and the interaction term between electrons and two - level systems.
- **Key Results**:
By introducing a standard set of parameters, the author calculates the BCS transition temperature of the d - wave superconducting state. The results show that for certain parameter values, the transition temperature can reach the order of tens of K. However, a high electric - field intensity will suppress the effective interaction, resulting in a decrease in the transition temperature.
### Conclusion
The author proposes a d - wave - pairing mechanism induced by the interface, which utilizes localized electron excitations. The advantage of this geometric structure is that the spatial separation of the pairing excitation from the metal electrons helps prevent the screening of the excitation, thereby avoiding the reduction of the critical temperature due to the exchange effect. In addition, through the d - wave - pairing state, the influence of local Coulomb repulsion can be avoided. Finally, the paper proposes possible ways to further optimize this pairing mechanism, including using orthogonal atomic orbits to construct two subsystems to reduce the influence of vertex corrections.