Abstract:In recent years, topological antiferromagnetic materials with hexagonal Kagome structure have attracted great research interest due to their unique properties. Despite having a net magnetic moment close to zero, these topological antiferromagnets exhibit strong magnetoelectric, magneto-optical, and magnetothermal effects, with strength comparable to that of ferromagnetic materials, which makes them highly valuable for various applications. After extensive studies of several years, people have realized that most of the unique properties of topological antiferromagnets are actually closely related to their magnetic structures. However, it has been found that the magnetic structure of these materials is highly sensitive to their chemical composition and growth conditions. Therefore, it is crucial to develop a universal and simple method for measuring the magnetic structure and determining the magnetic phase transitions of hexagonal Kagome topological antiferromagnetic materials, which can severe as a good supplement for the current high-energy neutron diffraction approach, that is not accessible for ordinary laboratories. In this study, we successfully prepared high-quality (11 0)-oriented hexagonal Kagome antiferromagnetic Mn 3 Sn thin films on (1 02)-oriented Al 2 O 3 single crystal substrates using the pulsed laser deposition (PLD) method. After systematically measuring how the magnetic and transport properties of a Mn 3 Sn thin film change with temperature, we found that its magnetization curve, Hall resistivity curve, and magnetoresistance curve exhibit certain anomalous features at some or all of its three magnetic phase transition temperatures. These features can serve as good evidences of magnetic phase transitions in this hexagonal Kagome antiferromagnetic Mn3Sn thin film, or even could be used to measure the temperature of these magnetic phase transitions. Our work contributes to the further advancement of the application of hexagonal Kagome topological antiferromagnetic materials in spin electronic devices.

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Magnetic Phases and Specific Heat of Ultra-Thin Holmium Films

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Addendum: "On the nature of the phase transition in the itinerant helimagnet MnSi", <a class="link-https" data-arxiv-id="cond-mat/0702460v1" href="https://arxiv.org/abs/cond-mat/0702460v1">arXiv:cond-mat/0702460v1</a> [cond-mat.str-el]

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