Temperature-Dependent Influence of Shell Thickness on Carrier Dynamics in CdSe/ZnS Core-Shell Quantum Dot Structures

Moses G. Udoisoh

DOI: https://doi.org/10.59324/ejaset.2024.2(5).07

2024-09-01

Abstract:This study investigates the temperature-dependent influence of shell thickness on carrier dynamics in CdSe/ZnS core-shell quantum dots using multi-band effective mass theory and full phonon dispersion relations. The quantum confinement effects were modeled by solving the radial Schrödinger equation and Luttinger-Kohn Hamiltonian, incorporating a temperature-dependent potential offset. We found that increasing shell thickness from 1 nm to 10 nm results in a significant decrease in electron and hole energies by approximately 0.9959 eV and 0.9919 eV, respectively, at 200K. The squared matrix element |M_q |^2, representing the transition probability, increases by 0.0081 as the shell thickness increases, with a further enhancement of 0.0063 at higher temperatures (700K), indicating stronger electronic coupling. Additionally, the Auger recombination rate and carrier relaxation times decrease with increasing shell thickness, with the Auger rate increasing by a factor of 2.7 from 200K to 700K, underscoring the critical role of thermal management in quantum dot applications. These findings provide a quantitative understanding of how temperature and shell thickness jointly affect the optical and electronic properties of CdSe/ZnS quantum dots, offering valuable insights for optimizing their performance in optoelectronic devices.