Abstract:Optoelectronic synapses possess the potential to seamlessly integrate perception, storage, and neuromorphic computation, thereby offering advantages in constructing artificial vision systems. Gallium nitride (GaN) materials, renowned for their exceptional optoelectronic characteristics and the compatibility of Silicon-based GaN (GaN-on-Si) with CMOS technology, contribute significantly to realizing large-scale optoelectronic neuromorphic circuits. In this study, we present an optoelectronic dual-synapse based on a structurally-improved AlGaN/GaN MIS-HEMT with ring-shaped SiO2 barriers embedded surrounding the source and drain regions. This device facilitates simultaneous signal transmission to the source and drain through current-limiting electrical breakdown beneath the gate. This integration of two discrete optoelectronic synapses within a single device enhances neural signal transmission nodes and branching connectivity, facilitating the construction of large-scale neuromorphic circuits. Under the co-influence of electrical and optical pulses, the device not only demonstrates excellent optoelectronic synaptic characteristics but also exhibits the ability to modulate the critical wavelength of synaptic responses by varying the source/drain voltage, effectively simulating the light signal recognition observed in biological retinas. The synergistic operation of the two sub-synapses enables a successful transition from short-term potentiation (STP) to long-term potentiation (LTP). Furthermore, leveraging the device's STP, we emulate the function of artificial retina through a GaN optoelectronic neuromorphic array, successfully achieving image recognition in conjunction with artificial neural networks (ANNs). The devices developed in this study, based on GaN-on-Si allow wafer-level manufacturing, provding a promising avenue for the large-scale production of optoelectronic synapse devices and the realization of artificial vision systems.

PLD‐Grown Semi‐Insulating Ga2O3 Thin Film‐Based Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing Applications

Pulsed Laser Deposition of a Ga2O3 Thin Film for an Optoelectronic Synaptic Device.

AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing

Amorphous Ga2O3/GaN heterostructure for ultralow-energy-consumption optically stimulated synaptic devices

Spectrum‐dependent Photonic Synapses Based on 2D Imine Polymers for Power‐efficient Neuromorphic Computing

Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Optoelectronic artificial synapses based on β-Ga2O3 films by RF magnetron sputtering

Heteroepitaxy of Ε‐ga2o3 Thin Film for Artificial Synaptic Device

(Invited) Silicon Nanocrystals for Optoelectronic Synaptic Devices

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Artificial Synapse Emulated Through Fully Aqueous Solution-Processed Low-Voltage In2O3 Thin-Film Transistor with Gd2O3 Solid Electrolyte.

ZnO photoconductive synaptic devices for neuromorphic computing

Optoelectronic Neuromorphic Logic Memory Device Based on Ga2O3/MoS2 Van Der Waals Heterostructure with High Rectification and On/Off Ratios

An Artificial Optoelectronic Synapse Based on MoOxfilm.

Optoelectronic Dual-Synapse Based on Wafer-level GaN-on-Si Device Incorporating Embedded SiO2 Barrier Layers

Ultra-low power IGZO optoelectronic synaptic transistors for neuromorphic computing

Photo-synaptic Memristor Devices from Solution-processed Ga2O3 Thin Films

GaO x @GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity

InGaZnO-based Photoelectric Synaptic Devices for Neuromorphic Computing

Nanostructured CuAlO2@ZnO Optoelectronic Device for Artificial Synaptic Applications