Abstract:Material growth by van der Waals epitaxy has the potential to isolate monolayer (ML) materials and synthesize ultrathin films not easily prepared by exfoliation or other growth methods. Here, the synthesis of the early transition metal (Ti, V, and Cr) tellurides by molecular beam epitaxy (MBE) in the mono- to few-layer regime is investigated. The layered ditellurides of these materials are known for their intriguing quantum- and layer dependent- properties. Here we show by a combination of in situ sample characterization and comparison with computational predictions that ML ditellurides with octahedral 1T structure are readily grown, but for multilayers, the transition metal dichalcogenide (TMDC) formation competes with self-intercalated compounds. CrTe2, a TMDC that is known to be metastable in bulk and easily decomposes into intercalation compounds, has been synthesized successfully in the ML regime at low growth temperatures. At elevated growth temperatures or for multilayers, only the intercalation compound, equivalent to a bulk Cr3Te4, could be obtained. ML VTe2 is more stable and can be synthesized at higher growth temperatures in the ML regime, but multilayers also convert to a bulk-equivalent V3Te4 compound. TiTe2 is the most stable of the TMDCs studied; nevertheless, a detailed analysis of multilayers also indicates the presence of intercalated metals. Computation suggests that the intercalation-induced distortion of the TMDC-layers is much reduced in Ti-telluride compared to V-, and Cr-telluride. This makes the identification of intercalated materials by scanning tunneling microscopy more challenging for Ti-telluride. The identification of self-intercalation compounds in MBE grown multilayer chalcogenides may explain observed lattice distortions in previously reported MBE grown early transition metal chalcogenides. On the other hand, these intercalation compounds in their ultrathin limit can be considered van der Waals materials in their own right. This class of materials is only accessible by direct growth methods but may be used as "building blocks" in MBE-grown van der Waals heterostructures. Controlling their growth is an important step for understanding and studying the properties of these materials.

Experimental Realization of Monolayer Α‐Tellurene

Phase-engineered synthesis of atomically thin te single crystals with high on-state currents

Field-effect transistors made from solution-grown two-dimensional tellurene

Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene

Controllable synthesis of high-quality two-dimensional tellurium by a facile chemical vapor transport strategy

Ultrathin layers of beta-tellurene grown on highly oriented pyrolytic graphite by molecular-beam epitaxy

Experimental Realization of Atomic Monolayer Si9C15

Surfactant‐free Ultrasonication‐assisted Synthesis of 2d Tellurium Based on Metastable 1T'‐MoTe2

Highly Selective Synthesis of Monolayer or Bilayer WSe 2 Single Crystals by Pre-annealing the Solid Precursor

Experimental Realization of Semiconducting Monolayer Si2Te2 Films

Direct Multitier Synthesis of Two-Dimensional Semiconductor 2H-MoTe 2

Rectangular-Phase Tellurene on Ni(111) from Monolayer Films to Periodic Striped Patterns

Chromium Ditelluride Monolayer: A Novel Promising 2H Phase Thermoelectric Material with Direct Bandgap and Ultralow Lattice Thermal Conductivity

Molecular Beam Epitaxy of Transition Metal (Ti-, V-, and Cr-) Tellurides: From Monolayer Ditellurides to Multilayer Self-Intercalation Compounds

Two‐Dimensional Tellurium Nanosheets Exhibiting an Anomalous Switchable Photoresponse with Thickness Dependence

Charge tunable structural phase transitions in few-layer tellurium: a step toward building mono-elemental devices

Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics

Thin film TaAs: developing a platform for Weyl semimetal devices

Monolayer Tellurene–metal Contacts

Monolayer atomic crystal molecular superlattices

Large-area synthesis of high-quality monolayer 1T'-WTe2 flakes