Abstract:The fermi-level pinning effect caused by low-order contact interface influences the performance of carbon nanotube (CNT) network field-effect transistors (FETs). In this paper, ambipolar CNT network FETs subjected to van der Waals (vdW) contact are demonstrated with the negligible Fermi-level pinning effect by using a physical transfer approach. The vdW contact method allows for the metal and CNT network to retain their intrinsic states without direct chemical bonding and interface interactions, leading to low injection barrier and contact resistance (Rc). Therefore, the field-effect mobilities of vdW metal-semiconductor (MS) contact devices in regions of dominance of the holes (μp) and electrons (μn) were 18.71 and 2.4 cm2 V−1 s−1 and yielded enhancements 2 and 10 times, respectively, beyond those of devices with typically evaporated electrodes. In addition, to develop ambipolar devices with balanced output capability, two-dimensional materials (h-BN and graphene) were inserted into the MS interface to tune the injection barrier. Because the metal work function was effectively reduced by inserting the h-BN layer, devices with h-BN inserted obtained values of μp and μn of 15.85 and 5.1 cm2 V−1 s−1, respectively. For devices with graphene, because of its field-modulated band alignment capability, μn improved to 8.38 cm2 V−1 s−1, while μp dropped slightly to 17.5 cm2 V−1 s−1. Therefore, the vdW contact method is a highly efficient integration strategy for high-performance CNT network FETs, and the different insertion layers can efficiently tune the ambipolar transportation of CNT network FETs rather than using different contact metals. This research provides an avenue for the design of future CNT network-based electronics.

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