Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

Intercalation of Metals and Silicon at the Interface of Epitaxial Graphene and Its Substrates

Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Site‐Selective Bipolar Electrodeposition of Gold Clusters on Graphene Oxide Microsheets at a 3D Air|Liquid Interface

How to induce superconductivity in epitaxial graphene $via$ remote proximity effect through an intercalated gold layer

On the Effect of Gold Substrate on the Interface Between Graphene Monolayer and an Ionic Liquid

Near-free-standing Epitaxial Graphene on Rough SiC Substrate by Flash Annealing at High Temperature

Decoupling Epitaxial Graphene from SiC(0001) by Liquid-Phase Fluorine Intercalation

High Crystallinity and Decoupling of Graphene on a Metal: Reduced Coulomb Screening and Tunable pn-Junctions

Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Surface charge-transfer doping a quantum-confined silver monolayer beneath epitaxial graphene

Electronic decoupling and hole-doping of graphene nanoribbons on metal substrates by chloride intercalation

Decoupling Graphene from SiC(0001) via Oxidation

Er intercalation and its impact on transport properties of epitaxial graphene

Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Epitaxial graphene on SiC(0001): More than just honeycombs

Epitaxial Graphene Electronic Structure And Transport

Epitaxial Graphene Intercalation: A Route to Graphene Modulation and Unique 2D Materials

Lithium Intercalation Induced Decoupling of Epitaxial Graphene on SiC(0001): Electronic Property and Dynamic Process