David M.-T. Kuo,Yia-chung Chang
Abstract:It is illustrated that semiconductor quantum dots (QDs) embedded into an insulating matrix connected with metallic electrodes and some vacuum space can lead to significant thermal rectification effect. A multilevel Anderson model is used to investigate the thermal rectification properties of the multiple-QD junction. The charge and heat currents in the tunneling process are calculated via the Keldysh Green's function technique. We show that pronounced thermal rectification and negative differential thermal conductance (NDTC) behaviors can be observed for the multiple-QD junction with asymmetrical tunneling rates and strong interdot Coulomb interactions.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **How to achieve significant thermal rectification effect and negative differential thermal conductivity (NDTC) behavior through the design of multiple - quantum - dot (multiple - QD) junctions**. Specifically, the author explored whether the semiconductor quantum - dot system embedded in an insulating matrix and connected to metal electrodes and a vacuum layer can produce a significant thermal rectification effect in the nonlinear response region, and analyzed the relationship between this effect and thermal power.
### Research Background
1. **History of Thermal Rectification**: The phenomenon of thermal rectification can be traced back to 1935 when Starr discovered that the copper oxide/copper junction could exhibit thermal diode behavior. In recent years, the thermal rectification effect has also been predicted in one - dimensional phonon - junction systems.
2. **Existing Problems**: The rectification mechanism of a single quantum dot (QD) is still unclear, especially the relationship between thermal power and the thermal rectification effect is not clear. This has prompted researchers to explore whether multiple - quantum - dot junctions can be used as thermal rectifiers.
### Main Research Objectives
- **Demonstrate a Significant Thermal Rectification Effect**: By designing a multi - quantum - dot junction system, verify whether it can produce a significant thermal rectification effect in the nonlinear response region.
- **Understand the Thermal Rectification Mechanism**: Analyze the relationship between the thermal rectification effect and the coupling between quantum dots, electron Coulomb interactions, and energy - level differences.
- **Evaluate the Potential for Practical Applications**: Estimate the thermal current density and differential thermal conductivity of multi - quantum - dot junction devices and evaluate their feasibility in practical applications.
### Research Methods
- **Model Building**: Use a multi - level Anderson model to describe the insulator/quantum - dot/vacuum (IQV) double - barrier tunneling - junction system.
- **Calculation Method**: Calculate the charge and thermal currents during the tunneling process through the Keldysh Green's function technique.
- **Parameter Selection**: Consider the influence of different parameters (such as tunneling rate, Coulomb interaction strength, energy difference, etc.) on the thermal rectification effect.
### Key Formulas
The expressions for the charge current \(J_e\) and the thermal current \(Q\) are respectively:
\[
J_e = -\frac{2e}{h} \sum_{\ell} \int d\epsilon \, \gamma_{\ell}(\epsilon) \text{Im} G^r_{\ell,\sigma}(\epsilon) f_{LR}(\epsilon)
\]
\[
Q = -\frac{2}{h} \sum_{\ell} \int d\epsilon \, \gamma_{\ell}(\epsilon) \text{Im} G^r_{\ell,\sigma}(\epsilon) (\epsilon - E_F - e\Delta V) f_{LR}(\epsilon)
\]
where \(\gamma_{\ell}(\epsilon)=\frac{\Gamma_{\ell,L}(\epsilon) \Gamma_{\ell,R}(\epsilon)}{\Gamma_{\ell,L}(\epsilon)+\Gamma_{\ell,R}(\epsilon)}\) is the transmission factor, \(f_{LR}(\epsilon)=f_L(\epsilon)-f_R(\epsilon)\), and \(f_{L(R)}(\epsilon)=\frac{1}{\exp\left(\frac{\epsilon - \mu_{L(R)}}{k_B T_{L(R)}}\right)+1}\) is the Fermi - distribution function of the left (right) electrode.
### Conclusions
- **Significant Thermal Rectification Effect**: The research shows that the multi - quantum - dot junction system can produce a significant thermal rectification effect in the nonlinear response region, especially in the case of asymmetric tunneling rates and strong Coulomb interactions.
- **Negative Differential Thermal Conductivity (NDTC)**: Negative differential thermal conductivity behavior has been observed, which occurs with a low thermal current under certain conditions.
- **Potential for Practical Applications**: By reasonably selecting parameters, this device can have practical application value at a high temperature (about 1400K) and may even be able to operate at room temperature.
In summary,