Structure and stripe domain of melt-spun HoMn6Sn6-xGax ribbons

Bo-Ren Hou,Zhan Wang,Ying Li,Ji-Bing Sun,Ying Zhang

DOI: https://doi.org/10.1016/j.jmmm.2023.171111

IF: 3.097

2023-11-01

Journal of Magnetism and Magnetic Materials

Abstract:Topological magnetic skyrmions are expected to become a new generation of information carrier units, and exploring new magnetic skyrmion host materials and their magnetic domain structures is critical. This paper prepared HoMn6Sn6-xGax ribbons by melt-spinning and annealing and studied the effects of the second phase and doping Ga on the structure and magnetic domain of the ribbons. The results show that doped Ga only replaces the Sn sites in the HoMn6Sn6 phase, and the maximum substitution rate of Ga in the HoMn6Sn6 phase is close to 1/6. The unequal substitution of crystal positions causes the lattice to bear considerable compressive stress and negative strain. With an increase in doped Ga content, the lattice constant and cell volume of the HoMn6Sn6-xGax phase gradually decrease, and the substitution positions also change from mainly occupying Sn(2c) sites to occupying Sn(2e) and Sn(2d) sites simultaneously. Doping Ga enhances the preferential orientation in the grains, Ga occupying Sn(2d) sites enhances 〈009〉 orientation, and occupying Sn(2e) sites contributes to the enhancement in 〈204〉 orientation. Whether doped with Ga or not, the ribbons have stable stripe domains with HoMn6Sn6 structure. Increasing Ga content from x = 0.3 to x = 1.6 decreases the spin reorientation temperature, Curie temperatures, and the difference between the two temperatures.

materials science, multidisciplinary,physics, condensed matter