Defect‐Engineered Dzyaloshinskii–Moriya Interaction and Electric‐Field‐Switchable Topological Spin Texture in SrRuO3
Jingdi Lu,Liang Si,Qinghua Zhang,Chengfeng Tian,Xin Liu,Chuangye Song,Shouzhe Dong,Jie Wang,Sheng Cheng,Lili Qu,Kexuan Zhang,Youguo Shi,Houbing Huang,Tao Zhu,Wenbo Mi,Zhicheng Zhong,Lin Gu,Karsten Held,Lingfei Wang,Jinxing Zhang
DOI: https://doi.org/10.1002/adma.202102525
IF: 29.4
2021-01-01
Advanced Materials
Abstract:In situ electrical control of the Dzyaloshinskii-Moriya interaction (DMI) is one of the central but challenging goals toward skyrmion-based device applications. An atomic design of defective interfaces in spin-orbit-coupled transition-metal oxides can be an appealing strategy to achieve this goal. In this work, by utilizing the distinct formation energies and diffusion barriers of oxygen vacancies at SrRuO3 /SrTiO3 (001), a sharp interface is constructed between oxygen-deficient and stoichiometric SrRuO3 . This interfacial inversion-symmetry breaking leads to a sizable DMI, which can induce skyrmionic magnetic bubbles and the topological Hall effect in a more than 10 unit-cell-thick SrRuO3 . This topological spin texture can be reversibly manipulated through the migration of oxygen vacancies under electric gating. In particular, the topological Hall signal can be deterministically switched ON and OFF. This result implies that the defect-engineered topological spin textures may offer an alternate perspective for future skyrmion-based memristor and synaptic devices.