Remaining Useful Lifetime Prediction Based on Extended Kalman Particle Filter for Power SiC MOSFETs

Wei Wu,Yongqian Gu,Mingkang Yu,Chongbing Gao,Yong Chen

DOI: https://doi.org/10.3390/mi14040836

IF: 3.4

2023-04-13

Micromachines

Abstract:Nowadays, the performance of silicon-based devices is almost approaching the physical limit of their materials, which have difficulty meeting the needs of modern high-power applications. The SiC MOSFET, as one of the important third-generation wide bandgap power semiconductor devices, has received extensive attention. However, numerous specific reliability issues exist for SiC MOSFETs, such as bias temperature instability, threshold voltage drift, and reduced short-circuit robustness. The remaining useful life (RUL) prediction of SiC MOSFETs has become the focus of device reliability research. In this paper, a RUL estimation method using the Extended Kalman Particle Filter (EPF) based on an on-state voltage degradation model for SiC MOSFETs is proposed. A new power cycling test platform is designed to monitor the on-state voltage of SiC MOSFETs used as the failure precursor. The experimental results show that the RUL prediction error decreases from 20.5% of the traditional Particle Filter algorithm (PF) algorithm to 11.5% of EPF with 40% data input. The life prediction accuracy is therefore improved by about 10%.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: As the performance of silicon - based devices approaches the physical limits of their materials, it is difficult to meet the requirements of modern high - power applications. As one of the third - generation wide - band - gap power semiconductor devices, silicon carbide (SiC) MOSFETs perform well under high - temperature and high - pressure conditions, but they have many specific reliability problems, such as bias - temperature instability, threshold - voltage drift, and reduced short - circuit robustness. These problems seriously affect the reliability of SiC MOSFETs. Therefore, the paper aims to propose a SiC MOSFET remaining useful lifetime (RUL) prediction method based on the Extended Kalman Particle Filter (EPF) to improve the life prediction accuracy of SiC MOSFETs, thereby enhancing their reliability and maintenance efficiency in practical applications. Specifically, the paper monitors the on - state voltage (\(V_{ds,on}\)) of SiC MOSFETs as a precursor to failure by designing a new power - cycling test platform. It uses the EPF algorithm to overcome the problem of particle degeneracy in the traditional Particle Filter (PF) algorithm and provides a reasonable recommended density distribution for sampling particles, thereby further improving the accuracy of remaining useful life estimation. The experimental results show that, compared with the traditional PF algorithm, when 40% of the data is input, the RUL prediction error of the EPF algorithm is reduced from 20.5% to 11.5%, and the prediction accuracy is improved by about 10%.

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