Abstract:This work utilizes the interface properties of 2D MoTe2/MoS2−xOx heterostructures to successfully realize artificial synaptic functions that can be based on an optoelectronic bimodal working mechanism and solves the research difficulties of poor linearity and small tunable range. These studies provide an effective way to realize efficient neuromorphic hardware. The von Neumann bottleneck has long been a significant obstacle to the advancement of the era of intelligent computing. Neuromorphic devices are considered a promising solution to overcome this bottleneck. These devices draw inspiration from the information processing and computing capabilities of neurons in the human brain. Nevertheless, biomimetic synaptic devices used in neural network computing encounter significant challenges, including high nonlinearity in regulation, limited abundance of state conductance, and restrictions in unidirectional plasticity. Here, a memristor synaptic device is reported that utilizes the ion migration properties of MoTe2/MoS2−xOx heterojunction interface. This device demonstrates remarkable exceptional linearity, extensive dynamic regulation, and bidirectional independently controllable synaptic plasticity when subjected to bimodal regulation using electrical and optical signals. In addition, it shows significant paired‐pulse facilitation, empirical learning, and spike‐timing‐dependent properties. Furthermore, a deep learning framework is constructed to evaluate the reliability of devices in neuromorphic computation. The electronic synapses achieve high accuracy rates of 99.3% and 96.5% in recognizing digits and floral graphics, while photonic synapses achieve 95.3% and 91.5%. These findings emphasize the superior performance of photonic synapses in synaptic computation and provide a potential methodology for integrating multimodal neuromorphic hardware with artificial intelligence computing systems.

Hybrid neuromorphic hardware with sparing 2D synapse and CMOS neuron for character recognition

Homogeneous Spiking Neuromorphic System for Real-World Pattern Recognition

Hybrid Dual-Complementary Metal-Oxide-semiconductor/memristor Synapse-Based Neural Network with Its Applications in Image Super-Resolution

Energy-Efficient, Stable and Temperature-Tolerant Neuromorphic Device Based on Single Crystals of Halide Perovskites

Adaptive Immunomorphic Hardware Based on Organic Semiconductors and Oxidized MXene Heterostructures for Feature Information Recognition

An Efficient Training Methodology of Hardware Neural Network Based on Wafer‐Scale MoS2 Synaptic Array

2D MoTe2/MoS2−xOx Van der Waals Heterostructure for Bimodal Neuromorphic Optoelectronic Computing

Analog Spiking Neuron in CMOS 28 nm Towards Large-Scale Neuromorphic Processors

Multicore Spiking Neuromorphic Chip in 180-nm with ReRAM Synapses and Digital Neurons

Artificial SiN<sub>z</sub>:H Synapse Crossbar Arrays with Gradual Conductive Pathway for High-Accuracy Neuromorphic Computing

A 45nm CMOS Neuromorphic Chip with a Scalable Architecture for Learning in Networks of Spiking Neurons

Neuromorphic chip integrated with a large-scale integration circuit and amorphous-metal-oxide semiconductor thin-film synapse devices

Artificial SiNz:H Synapse Crossbar Arrays with Gradual Conductive Pathway for High-Accuracy Neuromorphic Computing

Face classification using electronic synapses

Gate tunable MoS2 memristive neuron for early fusion multimodal spiking neural network

Ultra-low-energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems.

HfZrOx-based Capacitive Synapses with Highly Linear and Symmetric Multilevel Characteristics for Neuromorphic Computing

LiSiOX-based Analog Memristive Synapse for Neuromorphic Computing

Low-voltage solution-processed artificial optoelectronic hybrid-integrated neuron based on 2D MXene for multi-task spiking neural network

MorphBungee: A 65-nm 7.2-mm2 27-μJ/image Digital Edge Neuromorphic Chip with On-Chip 802-frame/s Multi-Layer Spiking Neural Network Learning

Optoelectronic Synapses Based on MoS2 Transistors for Accurate Image Recognition