Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications
Farid Medjdoub,Keisuke Shinohara,Fabian Thome,Jeong-sun Moon,Eduardo Chumbes,Matthew T. Guidry,Umesh Mishra,Enrico Zanoni,Matteo Meneghini,Gaudenzio Meneghesso,James W. Pomeroy,Terirama Thingujam,Martin Kuball
DOI: https://doi.org/10.1109/mmm.2024.3428188
IF: 3.0619
2024-09-21
IEEE Microwave Magazine
Abstract:Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G and 6G mobile networks, are of great interest to support high-data-rate communications (e.g., 10 Gb/s or higher) and backhaul communications with >50 Gb/s. Since the E band and beyond can also support multigigahertz bandwidths, there is also growing interest in phased-array implementations. With its inherent integration advantage, SiGe phased arrays were demonstrated at the W band [1], with the latest result of a >10-Gb/s data rate [2]. In the case of point-to-point wireless links, III–V technologies [e.g., a pseudomorphic high-electron mobility transistor (pHEMT)] have also been utilized in full-duplex W-band links with a peak data rate of 10 Gb/s [2].
telecommunications,engineering, electrical & electronic