Abstract:In the current study, we have focused on the dielectric and A.C. conductivity behavior in thin films of Se:Graphene and Se:MWCNTs nanocomposite samples by doping graphene and MWCNT in g-Se. The thin films of aforesaid nanocomposites have been prepared by physical vapor deposition. The well-known Meyer–Neldel rule and Jonscher's Universal power law have been employed to investigate the variation of A.C. conductivity with frequency and temperature. The strong dependence of conductivity over temperature is described using a model that is applied for correlated barrier hopping (CBH) in Se:MWCNTs thin films. However, the non-overlapping small polaron tunneling (NSPT) model is found to be applicable for Se:Graphene thin film. The activation energy for the nanocomposite thin films was evaluated from the Arrhenius plot. The random free energy barrier hopping model explains the system's ac conductivity ( σ ac ). In our study, we observed the Meyer–Neldel rule (MNR) as well as reverse MNR for Se:Graphene and Se:MWCNTs nanocomposite thin films, respectively. The investigation of dielectric loss confirms that the theory of Guintini regarding dielectric dispersion applies to our samples.

Perspectives of dielectric and A.C. conductivity behavior of MWCNT and graphene-doped amorphous Selenium thin films