Patterning of Wafer‐Scale MXene Films for High‐Performance Image Sensor Arrays

Bo Li,Qian‐Bing Zhu,Cong Cui,Chi Liu,Zuo‐Hua Wang,Shun Feng,Yun Sun,Hong‐Lei Zhu,Xin Su,Yi‐Ming Zhao,Hong‐Wang Zhang,Jian Yao,Song Qiu,Qing‐Wen Li,Xiao‐Mu Wang,Xiao‐Hui Wang,Hui‐Ming Cheng,Dong‐Ming Sun

DOI: https://doi.org/10.1002/adma.202201298

IF: 29.4

2022-03-20

Advanced Materials

Abstract:As a rapidly growing family of 2D transition metal carbides and nitrides, MXenes are recognized as promising materials for the development of future electronics and optoelectronics. So far, the reported patterning methods for MXene films lack efficiency, resolution, and compatibility, resulting in limited device integration and performance. Here, a high-performance MXene image sensor array fabricated by a wafer-scale combination patterning method of an MXene film is reported. This method combines MXene centrifugation, spin-coating, photolithography, and dry-etching and is highly compatible with mainstream semiconductor processing, with a resolution up to 2 µm, which is at least 100 times higher than other large-area patterning methods reported previously. As a result, a high-density integrated array of 1024-pixel Ti₃ C₂ T_x /Si photodetectors with a detectivity of 7.73 × 10¹⁴ Jones and a light-dark current ratio (I_light /I_dark ) of 6.22 × 10⁶ , which is the ultrahigh value among all reported MXene-based photodetectors, is fabricated. This patterning technique paves a way for large-scale high-performance MXetronics compatible with mainstream semiconductor processes.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to pattern MXene films efficiently and with high - resolution in large - scale production for the manufacture of high - performance image sensor arrays. As a two - dimensional transition - metal carbide and nitride, MXene is considered a strong candidate for future electronics and optoelectronics materials due to its unique properties. However, the existing MXene film patterning methods are insufficient in terms of efficiency, resolution, and compatibility with mainstream semiconductor processes, which limits the integration and performance of devices. To solve these problems, the paper proposes a large - scale combined patterning method for MXene films that combines centrifugation, spin - coating, photolithography, and dry etching techniques. This method has a high resolution (up to 2 μm) and is highly compatible with mainstream semiconductor processes. Through this method, the researchers successfully fabricated a 1,024 - pixel Ti_3C_2T_x/Si photodetector array with an ultra - high detectivity (7.73 × 10^14 Jones) and a high light - to - dark current ratio (6.22 × 10^6), demonstrating the great potential of MXene in the field of micro - and nano - electronics.