Abstract:We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific community engaged in research on ZnO. Irradiation with the initial fluence 1 X 10^15 ions/cm^2 changes the colour of the sample from white to orange while the highest irradiation fluence makes it dark reddish brown that appears as black. Such changes in colour can be correlated with the oxygen vacancy type defects. No significant change in the grain size of the irradiated samples, as revealed from the x-ray diffraction (XRD) line width broadening, has been observed. Increase of surface roughness due to sputtering is clearly visible in scanning electron micrographs (SEM) with highest fluence of irradiation. Room temperature Photoluminescence (PL) spectrum of the unirradiated sample shows intense ultra-violet (UV) emission (~ 3.27 eV) and less prominent defect level emissions (2-3 eV). The overall emission is largely quenched due to initial irradiation fluence. But with increasing fluence UV emission is enhanced along with prominent defect level emissions. Remarkably, the resistivity of the irradiated sample with highest fluence is reduced by four orders of magnitude compared to that of the unirradiated sample. This indicates increase of donor concentration as well as their mobility due to irradiation. Oxygen vacancies are deep donors in ZnO, but surely they influence the stability of the shallow donors (presumably zinc interstitial related) and vice versa. This is in conformity with recent theoretical calculations.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the effects of low - energy Ar ion irradiation on the structure, electronic and optical properties of ZnO materials. Specifically, the researchers hope to irradiate polycrystalline ZnO samples with 1.2 MeV Ar\(^{8+}\) ions to reveal the following issues: 1. **Structural changes**: Use X - ray diffraction (XRD) to study the changes in the crystal structure of ZnO before and after irradiation, especially whether there is an amorphization phenomenon and the change in grain size. 2. **Surface morphology changes**: Use a scanning electron microscope (SEM) to observe the changes in the sample surface morphology, especially the increase in surface roughness under high irradiation doses. 3. **Changes in electrical properties**: Measure the change in room - temperature resistivity to understand the influence of irradiation on carrier concentration and mobility, so as to explain the reason for the significant decrease in resistivity. 4. **Changes in optical properties**: Through photoluminescence (PL) spectral analysis, study the change rules of the ultraviolet (UV) emission peak and the defect - state emission peak, and explore the relationship between them and defects such as oxygen vacancies. 5. **Color changes**: Observe and explain the phenomenon that the color of the sample gradually changes from white to orange, dark red - brown (approximately black) under different irradiation doses, and speculate that this is related to oxygen - vacancy - type defects. 6. **Defect mechanisms**: Combine theoretical calculations and other experimental results to deeply understand the interactions between various defects (such as zinc interstitials, oxygen vacancies, antisite defects, etc.) in ZnO and their influence on material properties. In summary, this paper aims to systematically study the regulation effect of low - energy Ar ion irradiation on the defect state of ZnO materials, and further clarify how these defects affect the structure, electrical and optical characteristics of ZnO. This research not only helps to deepen the understanding of the intrinsic defect behavior of ZnO materials, but also provides important scientific basis and technical support for the future development of ZnO - based functional devices.

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