Abstract:III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We developed hot-wall and cold-wall metal organic vapor phase epitaxy (MOVPE) reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2 X 10$^{-9}$ Torr. A load-lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities approaching 16,000 cm$^2$(V.s).

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is the entry barrier caused by the high cost of commercial nanowire growth reactors for most research groups. Specifically, the article describes the development and operation of hot - wall and cold - wall metal - organic vapor - phase epitaxy (MOVPE) reactors, aiming to provide a relatively simple and low - cost system for producing high - quality semiconductor nanowires. ### Specific background of the problem 1. **High cost of commercial reactors**: - The cost of commercial III - V nanowire growth reactors is very high. For example, the cost of the Aixtron AIX 200 system is close to $1.3 million. This makes it difficult for many university - scale research projects to enter the field of semiconductor nanowire research. 2. **Limitations of existing systems**: - Commercial systems are usually optimized for the growth of two - dimensional uniform epitaxial layers, and the requirements for temperature control and gas flow rate uniformity are very strict. However, nanowire growth does not require such strict conditions, so a simpler system can be designed. ### Solutions in the paper 1. **Develop a low - cost hot - wall reactor**: - Using an inexpensive quartz tube furnace as a basis, a hot - wall reactor was developed. This reactor can grow InAs nanowires under limited operating conditions, but the crystal quality and growth repeatability need to be improved. 2. **Develop a high - performance cold - wall reactor**: - A ultra - high - vacuum (UHV) cold - wall reactor with a base pressure of 2×10⁻⁹ Torr was constructed. The growth chamber is prevented from being exposed to the atmosphere during sample transfer through a load - lock system. The nanowires grown in the cold - wall reactor have a low defect density, and the field - effect mobility is close to 16,000 cm²/(V·s), showing excellent performance. ### Main contributions - An economical and efficient solution is provided, enabling more research groups to conduct research on semiconductor nanowires. - By optimizing the reactor design, the crystal quality and growth repeatability of nanowires are improved, providing high - quality materials for nanoelectronics and photonics applications. In summary, this paper solves the problem of high cost of commercial nanowire growth reactors by developing low - cost and efficient hot - wall and cold - wall reactors, providing new tools and methods for semiconductor nanowire research.

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