Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

Development and operation of research-scale III-V nanowire growth reactors

Generic Technique to Grow Iii-V Semiconductor Nanowires in A Closed Glass Vessel

Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition

Nanowires for Optoelectronic Device Applications

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

Engineering III–V Semiconductor Nanowires for Device Applications

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE

Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots

Design and Growth of III–V Nanowire Solar Cell Arrays on Low Cost Substrates

Growth of High-Crystallinity Uniform GaAs Nanowire Arrays by Molecular Beam Epitaxy*

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures

A Simple SVS Way to Obtain Large-scale WO3 Nanowire Cold Cathode Emitters at Atmospheric Pressure and Low Temperature

Epitaxy of Iii-V Semiconductor Nanowires Towards Optoelectronic Devices

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Nanoscale Opening Fabrication on Si (111) Surface from Sio2 Barrier for Vertical Growth of Iii-V Nanowire Arrays

Large Scale Synthesis of Α-Si3n4 Nanowires Through a Kinetically Favored Chemical Vapour Deposition Process

A simple SVS method for obtaining large-scale WO3 nanowire cold cathode emitters at atmospheric pressure and low temperature