Excess dissipation in a single-electron box: The Sisyphus resistance

F. Persson,C.M. Wilson,M. Sandberg,G. Johansson,P. Delsing
DOI: https://doi.org/10.1021/nl903887x
2010-04-20
Abstract:We present measurements of the ac response of a single-electron box (SEB). We apply an rf signal with a frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model. We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.
Superconductivity,Other Condensed Matter
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