Abstract:An in‐depth investigation of the related mechanisms behind antiferroelectric Hf0.25Zr0.75O2 back‐switching dynamics is conducted. Leveraging the spontaneous back‐switching of antiferroelectric Hf0.25Zr0.75O2, the dynamic current integration and fading memory properties are successfully emulated in the antiferroelectric‐based transistor. The device manifests significant potential for the physical implementation of reservoir computing systems, offering excellent accuracy in spatial–temporal information processing. Spatial‐temporal time series analysis and forecasting are crucial for understanding dynamic systems and making informed decisions. Recurrent neural networks (RNNs) have paved the way for reservoir computing (RC), a method enabling effective temporal information processing at low training costs. While software‐based RC performs well, physical RC systems face challenges like slow processing speed and limited state richness, leading to high hardware costs. This study introduces an innovative approach, i.e., the antiferroelectric field effect transistor‐based RC (AFeFET‐based RC) system for efficient temporal data processing. By exploiting the fading memory property inherent in hafnium oxide‐based antiferroelectric material, this system demonstrates promise for physical RC implementation. Moreover, it leverages the light sensitivity of 2D molybdenum disulfide (MoS2) channels for controllable temporal dynamics under electrical and optical stimuli. This dual‐mode modulation significantly enriches the reservoir state, boosting overall system performance. Experimental tests on standard benchmarking tasks using the AFeFET‐based RC system yielded impressive accuracy results (95.4%) in spoken‐digit recognition and a remarkable normalized root mean square error (NRMSE) of 0.015 in Mackey–Glass time series prediction.

Noise Robust Reservoir Computing Based on Flexible Doped Hafnium Oxide Memcapacitors

Power‐Efficient Multisensory Reservoir Computing Based on Zr‐doped HfO2 Memcapacitive Synapse Arrays

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Physical reservoirs based on MoS 2 –HZO integrated ferroelectric field-effect transistors for reservoir computing systems

MEMS reservoir computing system with stiffness modulation for multi-scene data processing at the edge

Intrinsic Voltage Offsets in Memcapacitive Bio-Membranes Enable High-Performance Physical Reservoir Computing

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Switching Dynamics in Anti‐Ferroelectric Transistor for Multimodal Reservoir Computing

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

Dynamic Memristor-based Reservoir Computing for High-Efficiency Spatiotemporal Signal Processing

Spiking Reservoir Computing Based on Stochastic Diffusive Memristors

Highly efficient ferroelectric capacitor reservoir computing through the study of its nonlinear polarization dynamics

Enhancement of Multi-Timescale Reservoir Computing Based on Homogeneous Hardware Platform with Controllable Ionic Dynamics

Reservoir Computing with a Random Memristor Crossbar Array

Biomembrane-based Memcapacitive Reservoir Computing System for Energy Efficient Temporal Data Processing

Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing

All-ferroelectric implementation of reservoir computing

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Energy-Efficient Reservoir Computing Based on Solution-Processed Electrolyte/Ferroelectric Memcapacitive Synapses for Biosignal Classification

Analysis and Fully Memristor-based Reservoir Computing for Temporal Data Classification

Biomemristor Reservoir Computing With Multi-Value Mask for Improving Recognition Performance