Improving energy storage performance of BLLMT ceramic by doping BZT combining with defect engineering and film scraping process
Jun Sun,Guiwei Yan,Bijun Fang,Shuai Zhang,Xiaolong Lu,Jianning Ding
DOI: https://doi.org/10.1016/j.jallcom.2023.172708
IF: 6.2
2023-11-06
Journal of Alloys and Compounds
Abstract:The (1-x)(Ba 0.94 Li 0.02 La 0.04 )(Mg 0.04 Ti 0.96 )O 3 -xBi(Zn 1/2 Ti 1/2 )O 3 ((1-x)BLLMT-xBZT, x = 0.02, 0.04, 0.06, 0.08, 0.10, 0.12) ceramic thick films were prepared by traditional solid-state sintering method combined with film scraping process. Li + and La 3+ ions doping at A-site, and Mg 2+ and Zn 2+ ions doping at B-site of the perovskite structure, and adding BZT component enhance charge compensation, enlarge polarization difference, increase breakdown strength, and enhance relaxation degree, leading to the improved pulse charging and discharging energy storage performance of the BaTiO 3 -based ceramic films. The 0.92BLLMT-0.08BZT ceramic film has high discharge energy density of 4.61 J/cm 3 , high pulse power density P D = 224.14 MW/cm 3 , high current density C D = 896.58 A/cm 2 , high discharge speed of 234 ns, and high pulse discharge density W d = 4.61 J/cm 3 under 500 kV/cm combined with high breakdown strength of 500 kV/cm, relating to charge compensation, multiple ferroelectric phases coexistence, and formation of polar nanoregions. The strategy by equivalent and heterovalent ions doping at A-site and B-site of the perovskite structure and introducing Bi-based component combined with film scraping process strengthens charge compensation, enhances relaxation characteristic, and reduces grain size, providing an efficient route to develop prospect BT-based dielectric ceramic capacitors for potential application in high-power pulse energy storage such as 0.92BLLMT-0.08BZT.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering