Abstract:Graphene: a sp2 carbon system is a zero band gap semiconductor. In spite of having extraordinary properties, opening of band gap is the bottleneck in the path of graphene for becoming the heart of all modern electronics. Chemical doping can prove itself to be the fastest solution to this problem as it is one of the most informal approaches to induce band gap in pristine. Due to tiny nanostructures and dimensions of graphene, modelling and simulative study of graphene is more effective and confirmative than experimental results. In this study we have compared our results with the previous works, our simulation matches well with the previous works. The main concern is on the substitution and pair doping of BN, B and N open up an energy band gap up to (0.379eV) and (0.386eV). Codoping of B-N create a band gap up to (0.712eV) and pair doping shows that 1BN(0.616eV), 2BN(0.386eV), 3BN pair create a sharp increase in band gap up to (1.457eV) when substitute on graphene, while the substitution doping and increased in the super cell models with the same doping concentration of silicon induced a band gap of 1.019eV, where Si doping on different super cell shows a band gap enhancement from 0.57eV at (6x6) model to 1.90eV at (5x5) model and change its nature from semimetal to semiconductor. The present review article focuses on the alteration of electronic and optical properties by adding different dopants on to the graphene sheets, using density functional theory (DFT) calculations. Doping can improve the electronic properties of graphene by producing a small band gap in it, resulting in the appropriateness of this interesting material for modern electronics. Different codes and approximations have been applied to tune the band structure of graphene that has been discussed in the article.

Ground-state properties of gapped graphene using the random phase approximation

Electronic And Transport Properties In Geometrically Disordered Graphene Antidot Lattices

Gaps and tails in graphene and graphane

Asymmetric Spin Gap Opening of Graphene on Cubic Boron Nitride (111) Substrate

The Ground State of Graphene and Graphene Disordered by Vacancies

Robust zero-averaged wave-number gap inside gapped graphene superlattices

Computational investigation of the electronic and optical properties of planar Ga-doped Graphene

Optical Conductivity Of Disordered Graphene Beyond The Dirac Cone Approximation

Advances in tuning band gap of graphene by potential doping using DFT: a review

Energy-gap Opening and Quenching in Graphene under Periodic External Potentials

Electronic Band Gaps and Transport Properties in Graphene Superlattices with One-Dimensional Periodic Potentials of Square Barriers

The superconducting energy gap in the hole-doped graphene beyond the Migdal's theory

Gap state analysis in electric-field-induced band gap for bilayer graphene

Correlation hard gap in antidot graphene

Drude Conductivity of Dirac Fermions in Graphene

Edge currents shunt the insulating bulk in gapped graphene

Gap Opening by Asymmetric Doping in Graphene Bilayers

Confinement of Dirac fermions in gapped graphene

Transport properties in gapped graphene through magnetic barrier in a laser field

Size quantization of Dirac fermions in graphene constrictions

Conductance enhancement due to atomic potential fluctuations in graphene