The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics

Xiaosong Wu,Mike Sprinkle,Xuebin Li,Fan Ming,Claire Berger,Walt A. de Heer
DOI: https://doi.org/10.1103/PhysRevLett.101.026801
2008-07-07
Abstract:Graphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers (SB) at the graphene/graphene oxide junctions, as a consequence of the band-gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 $^\circ$C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm$^2$/Vs, rivaling silicon. {\it In situ} local oxidation of patterned epitaxial graphene has been achieved.
Mesoscale and Nanoscale Physics,Materials Science
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