A. Matos-Abiague,J. Fabian
Abstract:The effects of the spin-orbit interaction on the tunneling magnetoresistance of magnetic tunnel junctions are investigated. A model in which the experimentally observed two-fold symmetry of the anisotropic tunneling magnetoresistance (TAMR) originates from the interference between Dresselhaus and Bychkov-Rashba spin-orbit couplings is formulated. Bias induced changes of the Bychkov-Rashba spin-orbit coupling strength can result in an inversion of the TAMR. The theoretical calculations are in good agreement with the TAMR experimentally observed in epitaxial Fe/GaAs/Au tunnel junctions.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explain the origin of the tunneling anisotropic magnetoresistance (TAMR) effect observed in magnetic tunnel junctions (MTJs), especially the two - fold symmetry of TAMR in Fe/GaAs/Au heterojunctions. Specifically, the authors proposed a model to explain how this two - fold symmetry is caused by the interference between Dresselhaus and Bychkov - Rashba spin - orbit couplings (SOIs), and explored the effect of bias voltage on the strength of Bychkov - Rashba SOI, which leads to the inversion of TAMR.
### Main problems:
1. **Origin of TAMR**: The TAMR observed in experiments has a two - fold symmetry, which is different from the traditional tunneling magnetoresistance (TMR), where the latter is usually not dependent on the specific orientation of the magnetization direction. Therefore, the physical mechanism of this phenomenon needs to be explained.
2. **Effect of bias voltage on TAMR**: It was found in experiments that the sign of TAMR can be flipped by changing the bias voltage. The physical mechanism behind this phenomenon is still unclear and requires a theoretical model to explain.
### Solutions:
The authors proposed a theoretical model, attributing the two - fold symmetry of TAMR to the interference effect between Dresselhaus and Bychkov - Rashba spin - orbit couplings. Specifically:
- **Dresselhaus SOI**: Caused by the bulk inversion asymmetry of the semiconductor bulk material, its expression is:
\[
H_D=\frac{1}{\hbar}(\sigma_x p_x-\sigma_y p_y)\frac{\partial}{\partial z}\left(\gamma(z)\frac{\partial}{\partial z}\right)
\]
where \(\gamma(z)\) is the Dresselhaus parameter, which has a finite value in the semiconductor region and is zero in other regions.
- **Bychkov - Rashba SOI**: Caused by the interface structure inversion asymmetry, its expression is:
\[
H_{BR}=\frac{1}{\hbar}\sum_{i = l,r}\alpha_i(\sigma_x p_y-\sigma_y p_x)\delta(z - z_i)
\]
where \(\alpha_l\) and \(\alpha_r\) represent the SOI strengths of the left (ferromagnetic layer) and right (normal metal layer) interfaces respectively.
- **Total Hamiltonian**: Considering the above two SOIs and other terms, the total Hamiltonian is:
\[
H = H_0 + H_Z + H_{BR}+H_D
\]
where \(H_0\) is the Hamiltonian without SOI, and \(H_Z\) is the spin - splitting term caused by the exchange field in the ferromagnetic layer.
By calculating the scattering states and transmission probabilities of electrons in the heterojunction, the authors obtained the angular dependence and bias - voltage dependence of TAMR, and compared them with the experimental results to verify the validity of the model.
### Key conclusions:
1. **Two - fold symmetry of TAMR**: Originates from the interference effect between Dresselhaus and Bychkov - Rashba SOIs.
2. **TAMR inversion caused by bias voltage**: Since the bias voltage changes the strength of Bychkov - Rashba SOI, it leads to the change of the TAMR sign.
3. **Robustness of the model**: Even under different bias voltages, the model can well explain the experimental data, indicating that the model has strong applicability.
Through these studies, the authors not only explained the origin of TAMR, but also revealed the effects of bias voltage on SOI and TAMR, providing a theoretical basis for further understanding and application of magnetic tunnel junctions.